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<p>Establishing a clear connection between defect structure and photocatalytic performance remains challenging, as conventional metrics often fail to predict efficacy. This study employs low-temperature irradiated thermoluminescence (TL) to probe charge carrier dynamics in zinc oxide (ZnO). Three ZnO nanoparticle samples were synthesized: non-annealed (ZnO-NA), single-annealed (ZnO-SA), and double-annealed (ZnO-DA). Despite systematic increases in crystallite size (44.56–115.13&#xa0;nm) and bandgap, methylene blue degradation followed a nonlinear trend: ZnO-SA (87%) &gt; ZnO-DA (84%) &gt; ZnO-NA (74%). Standard structural characterization could not explain this ranking. However, TL analysis revealed a direct correlation: the integrated TL intensity at 25°C—representing trapped charge carriers available at operating temperatures—perfectly matched the photocatalytic activity. ZnO-SA’s superior performance is attributed to an optimal defect structure that maximizes carrier retention. These findings establish low-temperature TL as a powerful predictive tool for linking trapped carrier populations to photocatalytic efficiency.</p>

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Low-Temperature Thermoluminescence as a Predictive Descriptor for Photocatalytic Activity in Semiconductor Oxides

  • 期刊论文

  • 发表日期：

    2026年7月18日

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  • H. Nivedita Devi,
  • T. Bibinash Devi,
  • L. Lovedy Singh,
  • A. Nabachandra Singh

摘要

Establishing a clear connection between defect structure and photocatalytic performance remains challenging, as conventional metrics often fail to predict efficacy. This study employs low-temperature irradiated thermoluminescence (TL) to probe charge carrier dynamics in zinc oxide (ZnO). Three ZnO nanoparticle samples were synthesized: non-annealed (ZnO-NA), single-annealed (ZnO-SA), and double-annealed (ZnO-DA). Despite systematic increases in crystallite size (44.56–115.13 nm) and bandgap, methylene blue degradation followed a nonlinear trend: ZnO-SA (87%) > ZnO-DA (84%) > ZnO-NA (74%). Standard structural characterization could not explain this ranking. However, TL analysis revealed a direct correlation: the integrated TL intensity at 25°C—representing trapped charge carriers available at operating temperatures—perfectly matched the photocatalytic activity. ZnO-SA’s superior performance is attributed to an optimal defect structure that maximizes carrier retention. These findings establish low-temperature TL as a powerful predictive tool for linking trapped carrier populations to photocatalytic efficiency.