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<p>A slanted channel gallium nitride (GaN) <i>p</i>-type field effect transistor (<i>p</i>-FET) is fabricated via sidewall regrowth of an <i>i</i>-GaN/AlGaN/<i>p</i>-GaN heterostructure. Distinct from conventional lateral structures, the proposed device features a creative integration of a planar access region and a slanted channel, which constitutes its core structural innovation. By constructing the gate region on a semi-polar plane (between the nonpolar <i>m</i>-plane and the polar <i>c</i>-plane), the lower polarization-induced charge density compared with the <i>c</i>-plane reduces the background hole concentration, thereby significantly suppressing the off-state leakage current. More importantly, this structure endows the device with two distinct output modes: a gate-controlled transistor mode (forward conduction, <i>V</i><sub>DS</sub> &lt; 0&#xa0;V), a gate-insensitive diode-like mode (reverse conduction, <i>V</i><sub>DS</sub> &gt; 0&#xa0;V) with a turn-on voltage of 1.3&#xa0;V. Technology Computer Aided Design (TCAD) simulations verify that this dual-mode characteristic originates from the pronounced electric field concentration at the channel apex induced by the slanted structural design: while the space charge region beneath the gate forms the barrier for forward conduction, this barrier is effectively suppressed by the focused electric field during reverse conduction. This work moves beyond the traditional paradigm of relying on parasitic PN or Schottky junctions for dual-mode operation. Instead, it establishes a new design principle using geometric field concentration to achieve asymmetric conduction. The proposed strategy offers a valuable reference for future innovations in power electronics.</p>

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A Slanted-Channel GaN p-FET with Dual-Mode Operation: Transistor-Like Forward and Diode-Like Reverse Conduction

  • 期刊论文

  • 发表日期：

    2026年7月18日

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  • Yang Yang,
  • Sen Huang,
  • Xingyu Fu,
  • Xinhua Wang,
  • Xinguo Gao,
  • Ke Wei,
  • Xinyu Liu,
  • Xuelin Yang,
  • Bo Shen

摘要

A slanted channel gallium nitride (GaN) p-type field effect transistor (p-FET) is fabricated via sidewall regrowth of an i-GaN/AlGaN/p-GaN heterostructure. Distinct from conventional lateral structures, the proposed device features a creative integration of a planar access region and a slanted channel, which constitutes its core structural innovation. By constructing the gate region on a semi-polar plane (between the nonpolar m-plane and the polar c-plane), the lower polarization-induced charge density compared with the c-plane reduces the background hole concentration, thereby significantly suppressing the off-state leakage current. More importantly, this structure endows the device with two distinct output modes: a gate-controlled transistor mode (forward conduction, VDS < 0 V), a gate-insensitive diode-like mode (reverse conduction, VDS > 0 V) with a turn-on voltage of 1.3 V. Technology Computer Aided Design (TCAD) simulations verify that this dual-mode characteristic originates from the pronounced electric field concentration at the channel apex induced by the slanted structural design: while the space charge region beneath the gate forms the barrier for forward conduction, this barrier is effectively suppressed by the focused electric field during reverse conduction. This work moves beyond the traditional paradigm of relying on parasitic PN or Schottky junctions for dual-mode operation. Instead, it establishes a new design principle using geometric field concentration to achieve asymmetric conduction. The proposed strategy offers a valuable reference for future innovations in power electronics.