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<p>Quantum cascade lasers (QCLs), as optically active devices composed of quantum-confined structures, require precise control of the structural accuracy of the quantum well to achieve high optical gain. In this study, an InGaAs/InAlAs quantum cascade laser structure was fabricated on an InP substrate using metalorganic chemical vapor deposition and the In atomic diffusion and the crystal structure distortion in quantum wells were characterized through aberration-corrected scanning transmission electron microscopy. The results demonstrate that, under 625°C growth conditions, In atomic diffusion causes significant interface broadening in InGaAs/InAlAs quantum wells, posing major challenges for maintaining the ~1&#xa0;nm target thickness. Additionally, In diffusion induces high-strain regions at the originally strain-balanced InGaAs/InAlAs interfaces, which degrades crystal quality, potentially reduces QCL efficiency, and may ultimately lead to device failure. This work provides new perspectives for understanding interface structures in multilayer quantum well semiconductor systems.</p>

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Influence of Indium Diffusion on Interface Quality of InGaAs/InAlAs Quantum Cascade Laser Structure

  • 期刊论文

  • 发表日期：

    2026年7月14日

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  • Xueyuan Bai,
  • Shuo Liu,
  • Baifang Liu,
  • Qiuxia Feng,
  • Wenyu Hu,
  • Xiaoyi Wang,
  • Yuechun Shi,
  • Yang Qiu

摘要

Quantum cascade lasers (QCLs), as optically active devices composed of quantum-confined structures, require precise control of the structural accuracy of the quantum well to achieve high optical gain. In this study, an InGaAs/InAlAs quantum cascade laser structure was fabricated on an InP substrate using metalorganic chemical vapor deposition and the In atomic diffusion and the crystal structure distortion in quantum wells were characterized through aberration-corrected scanning transmission electron microscopy. The results demonstrate that, under 625°C growth conditions, In atomic diffusion causes significant interface broadening in InGaAs/InAlAs quantum wells, posing major challenges for maintaining the ~1 nm target thickness. Additionally, In diffusion induces high-strain regions at the originally strain-balanced InGaAs/InAlAs interfaces, which degrades crystal quality, potentially reduces QCL efficiency, and may ultimately lead to device failure. This work provides new perspectives for understanding interface structures in multilayer quantum well semiconductor systems.