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<p>This study primarily uses environmentally friendly gallium-doped zinc oxide (Ga-doped ZnO, GZO) thin films as the transparent conductive electrode layer, and further introduces a TiO<sub>2</sub> dense layer to improve the carrier transport characteristics between the GZO and TiO<sub>2</sub> mesoporous layers. This TiO<sub>2</sub> dense layer also acts as a buffer, preventing dye from corroding the GZO film, thereby maintaining its photoelectric performance and improving the conversion efficiency of dye-sensitized solar cells (DSSCs). The GZO films were first optimized via an intermittent process, defined as introducing pauses during deposition to create segmented growth. Two parameters were systematically varied: the intermittent number (<i>I</i><sub>N</sub>) and the intermittent time (<i>I</i><sub>T</sub>). Next, the interface quality and device performance were further improved by thermal annealing processes at different temperatures. The carrier characteristics of the treated film were studied using Hall effect measurements, and its surface morphology and crystallinity were analyzed using scanning electron microscopy (SEM) and x-ray diffraction (XRD). Device efficiencies were finally evaluated under a solar simulator. Experimental results show that, after depositing the GZO film under the optimal conditions of IN = 2, IT = 10&#xa0;min, and annealing at 700°C, the film resistivity was reduced to 1.34 × 10<sup>−3</sup>&#xa0;Ω·cm, yielding an initial device conversion efficiency of 0.06%. Upon incorporating a TiO<sub>2</sub> compact buffer layer and optimizing the ohmic contact via 500°C annealing, the conversion efficiency increased fivefold to 0.29%. These findings demonstrate the potential of this structure for future application as a working electrode in DSSCs.</p>

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Study on Optimizing the (GZO+TiO2) Working-Electrode Structure to Enhance the Conversion Efficiency of Dye-Sensitized Solar Cells

  • 期刊论文

  • 发表日期：

    2026年6月29日

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  • Shao-Hwa Hu,
  • Yen-Sheng Lin,
  • Yun-Qin Lin,
  • Wei-Cheng Huang,
  • Shih-Kun Liu,
  • Jing-Shi He,
  • Jiao-Jiao Yuan

摘要

This study primarily uses environmentally friendly gallium-doped zinc oxide (Ga-doped ZnO, GZO) thin films as the transparent conductive electrode layer, and further introduces a TiO2 dense layer to improve the carrier transport characteristics between the GZO and TiO2 mesoporous layers. This TiO2 dense layer also acts as a buffer, preventing dye from corroding the GZO film, thereby maintaining its photoelectric performance and improving the conversion efficiency of dye-sensitized solar cells (DSSCs). The GZO films were first optimized via an intermittent process, defined as introducing pauses during deposition to create segmented growth. Two parameters were systematically varied: the intermittent number (IN) and the intermittent time (IT). Next, the interface quality and device performance were further improved by thermal annealing processes at different temperatures. The carrier characteristics of the treated film were studied using Hall effect measurements, and its surface morphology and crystallinity were analyzed using scanning electron microscopy (SEM) and x-ray diffraction (XRD). Device efficiencies were finally evaluated under a solar simulator. Experimental results show that, after depositing the GZO film under the optimal conditions of IN = 2, IT = 10 min, and annealing at 700°C, the film resistivity was reduced to 1.34 × 10−3 Ω·cm, yielding an initial device conversion efficiency of 0.06%. Upon incorporating a TiO2 compact buffer layer and optimizing the ohmic contact via 500°C annealing, the conversion efficiency increased fivefold to 0.29%. These findings demonstrate the potential of this structure for future application as a working electrode in DSSCs.