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<p>Manganite thin films have shown unique optical and electrical characteristics, making them a possible candidate for future optoelectronic devices. This study seeks to explore the properties of La<sub>0.7</sub>Ca<sub>0.3</sub>Mn<sub>0.90</sub>Ga<sub>0.10</sub>O<sub>3</sub> (LCMGO) thin films deposited on an n-type Si wafer using pulsed laser deposition. Structural analysis via x-ray diffraction revealed a polycrystalline orthorhombic structure with tensile strain at the LCMGO/Si interface. Atomic force microscopy indicated uniform island-like growth with nanoscale grains, root mean square roughness of 0.16&#xa0;nm, and average grain height of 79&#xa0;nm. The cross-sectional scanning electron microscopy image indicated strong film–substrate compatibility. Current–voltage measurements showed diode-like rectification and a notable increase in photocurrent under infrared illumination, attributed to the efficient electron–hole pair generation. Space-charge-limited conduction and Simmons mechanisms were identified as dominant charge transport phenomena. Previous studies have not examined the infrared (IR) photo-response of these manganite films, a gap which this work addresses by investigation of IR-induced photoconductivity in LCMGO/Si films.</p>

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Photo-Responsive Behavior of LCMGO Thin Films Grown by Pulsed Laser Deposition

  • 期刊论文

  • 发表日期：

    2026年6月20日

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  • Pratik Lakhani,
  • Tanvi Dudharejiya,
  • Nirali Udani,
  • Pankaj Solanki,
  • J. H. Markna,
  • Bharat Kataria

摘要

Manganite thin films have shown unique optical and electrical characteristics, making them a possible candidate for future optoelectronic devices. This study seeks to explore the properties of La0.7Ca0.3Mn0.90Ga0.10O3 (LCMGO) thin films deposited on an n-type Si wafer using pulsed laser deposition. Structural analysis via x-ray diffraction revealed a polycrystalline orthorhombic structure with tensile strain at the LCMGO/Si interface. Atomic force microscopy indicated uniform island-like growth with nanoscale grains, root mean square roughness of 0.16 nm, and average grain height of 79 nm. The cross-sectional scanning electron microscopy image indicated strong film–substrate compatibility. Current–voltage measurements showed diode-like rectification and a notable increase in photocurrent under infrared illumination, attributed to the efficient electron–hole pair generation. Space-charge-limited conduction and Simmons mechanisms were identified as dominant charge transport phenomena. Previous studies have not examined the infrared (IR) photo-response of these manganite films, a gap which this work addresses by investigation of IR-induced photoconductivity in LCMGO/Si films.