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<p>In this paper, high-performance indium gallium zinc tin oxide thin-film transistors (IGZTO TFTs) were fabricated by using a high-k Al<sub>2</sub>O<sub>3</sub> gate dielectric layer deposited via radio-frequency magnetron sputtering. The results demonstrate that low-voltage operation and low subthreshold swing are achieved through the modulation of the Al<sub>2</sub>O<sub>3</sub>/oxide active layer interface and effective gate-voltage control. Furthermore, this approach boosts charge carrier transport, leading to improved overall electrical performance and stability. The Al<sub>2</sub>O<sub>3</sub>/IGZTO TFTs exhibit excellent characteristics, including a high on/off current ratio of up to 10<sup>8</sup>, threshold voltage tuned to −0.4&#xa0;V, low subthreshold swing of 78.2&#xa0;mV/decade, and high field-effect mobility of 40.2&#xa0;cm<sup>2</sup>V<sup>−1</sup>&#xa0;s<sup>−1</sup>. These results indicate that Al<sub>2</sub>O<sub>3</sub>/IGZTO TFTs prepared at room temperature with high mobility and stability have broad application prospects in the fields of high-end displays and flexible electronics.</p> Graphical Abstract <p></p>

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Enhanced Electrical Characteristics and Stability of IGZTO Thin-Film Transistors Prepared Based on Al2O3 Gate Dielectric

  • 期刊论文

  • 发表日期：

    2026年6月1日

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  • Minfang Wu,
  • Xuan Ye,
  • Huihui Wang,
  • Mijie Zou,
  • Dingshan Zheng,
  • Yan-Hua Liao

摘要

In this paper, high-performance indium gallium zinc tin oxide thin-film transistors (IGZTO TFTs) were fabricated by using a high-k Al2O3 gate dielectric layer deposited via radio-frequency magnetron sputtering. The results demonstrate that low-voltage operation and low subthreshold swing are achieved through the modulation of the Al2O3/oxide active layer interface and effective gate-voltage control. Furthermore, this approach boosts charge carrier transport, leading to improved overall electrical performance and stability. The Al2O3/IGZTO TFTs exhibit excellent characteristics, including a high on/off current ratio of up to 108, threshold voltage tuned to −0.4 V, low subthreshold swing of 78.2 mV/decade, and high field-effect mobility of 40.2 cm2V−1 s−1. These results indicate that Al2O3/IGZTO TFTs prepared at room temperature with high mobility and stability have broad application prospects in the fields of high-end displays and flexible electronics.

Graphical Abstract