<p>Quantum sensing technologies have made significant strides owing to advancements in spin coherence, quantum control, and readout techniques. This progress has brought platforms such as nitrogen-vacancy (NV) centers in diamonds closer towards practical applications. However, as these systems facilitate the transition from laboratory settings to commercial use, we argue that materials integration and packaging, not spin coherence, will define the performance limits of deployment-ready quantum sensors. In this review, we examine NV-center platforms through the lens of microelectronics integration, identifying packaging-induced effect, i.e., mechanical strain, thermal drift, and electromagnetic parasitic, as factors governing reproducibility and scalability of this technology. Here, we establish a direct link between package architecture and sensing fidelity on the basis of the analysis of host materials and surface termination, optical and microwave interfacing, and heterogeneous integration strategies, by drawing parallels with mature fields such as conventional sensor integration and high-reliability power electronics, we assess the relevance of advanced interconnect technologies, including sintered silver and copper, for quantum systems. These comparisons unveil both transferable design principles and significant limitations stemming from quantum-specific constraints. A major barrier to industrialization is the lack of standardized design rules and reliability frameworks. Overcoming this challenge will necessitate a shift from device-centric optimization to system-level engineering that prioritizes materials and interfaces. Our analysis positions packaging as a crucial enabler of scalable quantum sensing and outlines potential pathways toward manufacturable, field-deployable quantum technologies.</p>

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Packaging and Interconnect Reliability Constraints in NV-Center Quantum Sensors: A Microelectronics Integration Perspective

  • Kim Shyong Siow,
  • Wei Jie Wang,
  • Seong Ling Yap,
  • Leong Chuan Kwek

摘要

Quantum sensing technologies have made significant strides owing to advancements in spin coherence, quantum control, and readout techniques. This progress has brought platforms such as nitrogen-vacancy (NV) centers in diamonds closer towards practical applications. However, as these systems facilitate the transition from laboratory settings to commercial use, we argue that materials integration and packaging, not spin coherence, will define the performance limits of deployment-ready quantum sensors. In this review, we examine NV-center platforms through the lens of microelectronics integration, identifying packaging-induced effect, i.e., mechanical strain, thermal drift, and electromagnetic parasitic, as factors governing reproducibility and scalability of this technology. Here, we establish a direct link between package architecture and sensing fidelity on the basis of the analysis of host materials and surface termination, optical and microwave interfacing, and heterogeneous integration strategies, by drawing parallels with mature fields such as conventional sensor integration and high-reliability power electronics, we assess the relevance of advanced interconnect technologies, including sintered silver and copper, for quantum systems. These comparisons unveil both transferable design principles and significant limitations stemming from quantum-specific constraints. A major barrier to industrialization is the lack of standardized design rules and reliability frameworks. Overcoming this challenge will necessitate a shift from device-centric optimization to system-level engineering that prioritizes materials and interfaces. Our analysis positions packaging as a crucial enabler of scalable quantum sensing and outlines potential pathways toward manufacturable, field-deployable quantum technologies.