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<p>ZnSe<sub>0.8</sub>Ag<sub>0.2</sub> thin films with thickness varying from 100&#xa0;nm to 600&#xa0;nm were synthesized to evaluate the impact of thickness modulation on their structural, optical, and electrical characteristics. X-ray diffraction measurements revealed that all films crystallize in a single hexagonal ZnSe phase, confirming phase purity and the successful substitutional incorporation of Ag without the formation of secondary compounds. Progressive peak narrowing with increasing thickness indicated enhanced crystallization, supported by the increase in crystallite size from approximately 15&#xa0;nm to 90&#xa0;nm and a simultaneous reduction in lattice microstrain, reflecting gradual relaxation of internal distortions and improved structural ordering in thicker films. Optical investigations showed a systematic redshift in the absorption edge as the thickness increased. Tauc analysis demonstrated a corresponding decrease in the optical bandgap from 2.64&#xa0;eV to 2.55&#xa0;eV, a behavior linked to grain coalescence, reduced defect density, and diminished disorder-induced localized states. Refractive index dispersion, extracted via the Swanepoel envelope method, exhibited a monotonic increase with thickness, indicating enhanced film packing density and electronic polarizability. Consistently, the Cauchy dispersion coefficients (A and B) increased with thickness, further reflecting improved optical homogeneity and stronger light–matter interaction in thicker films. Electrical measurements revealed a notable decrease in resistivity alongside a simultaneous increase in carrier concentration and Hall mobility, attributed to reduced grain boundary scattering, lower defect trapping, and the formation of more efficient percolation pathways for charge transport. Collectively, these findings highlight the decisive role of thickness engineering in tailoring the microstructure, band structure, optical constants, and charge transport behavior of ZnSe<sub>0.8</sub>Ag<sub>0.2</sub> thin films, confirming their potential suitability for integration in advanced optoelectronic and photonic platforms.</p>

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Structural, Optical, and Electrical Characteristics of ZnSe0.8Ag0.2 Thin Films: Role of Thickness

  • 期刊论文

  • 发表日期：

    2026年5月25日

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  • F. M. Aldosari,
  • S. A. Abd El-Azeem,
  • Atef Ismail,
  • E. R. Shaaban

摘要

ZnSe0.8Ag0.2 thin films with thickness varying from 100 nm to 600 nm were synthesized to evaluate the impact of thickness modulation on their structural, optical, and electrical characteristics. X-ray diffraction measurements revealed that all films crystallize in a single hexagonal ZnSe phase, confirming phase purity and the successful substitutional incorporation of Ag without the formation of secondary compounds. Progressive peak narrowing with increasing thickness indicated enhanced crystallization, supported by the increase in crystallite size from approximately 15 nm to 90 nm and a simultaneous reduction in lattice microstrain, reflecting gradual relaxation of internal distortions and improved structural ordering in thicker films. Optical investigations showed a systematic redshift in the absorption edge as the thickness increased. Tauc analysis demonstrated a corresponding decrease in the optical bandgap from 2.64 eV to 2.55 eV, a behavior linked to grain coalescence, reduced defect density, and diminished disorder-induced localized states. Refractive index dispersion, extracted via the Swanepoel envelope method, exhibited a monotonic increase with thickness, indicating enhanced film packing density and electronic polarizability. Consistently, the Cauchy dispersion coefficients (A and B) increased with thickness, further reflecting improved optical homogeneity and stronger light–matter interaction in thicker films. Electrical measurements revealed a notable decrease in resistivity alongside a simultaneous increase in carrier concentration and Hall mobility, attributed to reduced grain boundary scattering, lower defect trapping, and the formation of more efficient percolation pathways for charge transport. Collectively, these findings highlight the decisive role of thickness engineering in tailoring the microstructure, band structure, optical constants, and charge transport behavior of ZnSe0.8Ag0.2 thin films, confirming their potential suitability for integration in advanced optoelectronic and photonic platforms.