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<p>Two groups of Mg<sub>0.10</sub>Zn<sub>0.90</sub>O thin films, grown using spray pyrolysis and doped with donor-type impurities Ga or In, were investigated to compare the impact of residual stresses on the onset of the self-compensation process and defect accumulation at high donor doping levels. Donor doping of this type is relevant for potential applications of Mg<sub>0.10</sub>Zn<sub>0.90</sub>O films as transparent conducting oxides (TCOs) in optoelectronic devices. The Mg<sub>0.10</sub>Zn<sub>0.90</sub>O films were doped with Ga or In at concentrations ranging from 0 at.% to 4.0 at.%. A combination of experimental techniques was employed for characterization, including scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray energy-dispersive spectroscopy (EDS), optical transmittance, and absorption measurements, as well as monitoring electrical resistivity. The residual stresses in the studied films were calculated, taking into consideration the different ionic radii of the dopants, which are smaller (Ga) or larger (In) than those of Zn and Mg. The morphological, structural, optical, and electrical characteristics of the Ga- and In-doped Mg<sub>0.10</sub>Zn<sub>0.90</sub>O films were compared and analyzed, considering the impact of stress at various dopant concentrations on the onset of the self-compensation process.</p>

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Comparative Study of Structural, Optical, and Electrical Characteristics of Mg0.10Zn0.90O Films Doped with In or Ga Elements for TCO Applications

  • 期刊论文

  • 发表日期：

    2026年5月14日

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  • T. Torchynska,
  • B. El Filali,
  • J. Oliveros Garcia,
  • G. Polupan,
  • J. Douda

摘要

Two groups of Mg0.10Zn0.90O thin films, grown using spray pyrolysis and doped with donor-type impurities Ga or In, were investigated to compare the impact of residual stresses on the onset of the self-compensation process and defect accumulation at high donor doping levels. Donor doping of this type is relevant for potential applications of Mg0.10Zn0.90O films as transparent conducting oxides (TCOs) in optoelectronic devices. The Mg0.10Zn0.90O films were doped with Ga or In at concentrations ranging from 0 at.% to 4.0 at.%. A combination of experimental techniques was employed for characterization, including scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray energy-dispersive spectroscopy (EDS), optical transmittance, and absorption measurements, as well as monitoring electrical resistivity. The residual stresses in the studied films were calculated, taking into consideration the different ionic radii of the dopants, which are smaller (Ga) or larger (In) than those of Zn and Mg. The morphological, structural, optical, and electrical characteristics of the Ga- and In-doped Mg0.10Zn0.90O films were compared and analyzed, considering the impact of stress at various dopant concentrations on the onset of the self-compensation process.