Unique Analytical Heat Spreading Model of β-Ga2O3 Buffer Trap Engineered for High Temperature and Frequency Performance of Power AlN/β-Ga2O3 HEMT
摘要
Owing to the outstanding material quality and improved resistance to heating effects, the ultra-wide-bandgap semiconductor of β-Ga2O3 is being intensely assessed for the future generation of vertical high electron mobility transistors (HEMT). However, for channel temperatures above 450 K, Al2O3/β-Ga2O3 still demonstrates considerable limitations owing to the self-heating and trapping effect, and to address this problem, various technological approaches are being extensively explored. In this work, we report the analytical self-heat spreading model for the structure of the stacked AIN/β-Ga2O3 HEMT. The self-heat spreading model was realized by the stacked AIN-beside-gate epilayer. The proposed device’s self-heating effect only became evident at VGS = 3 V while the self-heating was mitigated from −1 V to 2 V owing to the trap densities, which stood at 2 × 1011 over a range of 300–492 K. Direct-current (DC) and radiofrequency (RF) improved significantly. Transconductance was enhanced by 100%, drain current IDSby 3.8%, off-state leakage current breakdown voltage by 39%, as well as excellent ION/IOFF ratio performance of