TCAD Design and Optimization of High-Efficiency n-i-p Heterojunction III–V//CIGS 4T Tandem Solar Cells
摘要
Four-terminal (4T) tandem solar cells eliminate current-matching constraints and allow independent optimization of sub-cells, offering greater flexibility to combine different technologies and materials for optimized device performance. Stacked materials with complementary bandgaps improve carrier collection and harvesting of a broader solar spectral range while reducing thermalization and transmission losses through optimized heterojunctions. In this study, we present the design, numerical simulation, and optimization analysis of different III–V//CIGS 4T tandem solar cells. The most promising device involves a n-i-p top cell (n-InGaP/i-Al0.3Ga0.7As/p-Al0.3Ga0.7As) stacked on a CuIn1−xGaxSe2 (CIGS) bottom cell. A parametric study is conducted by means of the Atlas-Silvaco simulator calibrated against experimental data, revealing that the tandem efficiency is dominated by the top cell structure and its geometrical parameters. The optimized design of the top cell leads to a hetero-emitter thickness of 0.05 µm, an intrinsic layer thickness of 0.95 µm, and a base thickness of 3 µm, allowing the tandem cell to perform a conversion efficiency of 38.91% under AM1.5G illumination. The open-circuit voltage is 1.94 V. To support these findings, a real-coded genetic algorithm (RCGA) implemented an automatic fine-tuning routine which confirms and validates the obtained results, refining only slightly the top base thickness (2.99 µm) and the tandem efficiency calculation (38.93%). The presented analysis highlights the important role of advanced TCAD (technology computer-aided design) simulations, as well as global optimization techniques, in reliable and cost-effective designing of next generation of high-efficiency tandem solar cells.