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<p>Ultra-precision grinding is pivotal for 4H-SiC substrates, yet the relative roles of normal force and grit depth of cut (GDoC) in damage formation remain disputed. We use a simulation-led molecular dynamics (MD) framework, validated by nano-scratch cross-sections, to decouple force and GDoC under constant-load and constant-GDoC protocols. Results show that GDoC governs stress-field penetration and subsurface damage (SSD) signatures, and therefore the brittle–ductile transition. Transmission electron microscopy (TEM) observations of slip bands, microcracks, and SSD depth agree with simulated stress localization and defect evolution, supporting a geometry-controlled damage mechanism. The findings guide prioritization of depth-related control metrics for low-damage machining of 4H-SiC and other brittle substrates.</p>

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Subsurface Damage Depth of 4H-SiC During Nano-scratch: Grit Depth of Cut Outweighs Normal Force in Governing Damage

  • 期刊论文

  • 发表日期：

    2026年4月30日

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  • Haoxiang Wang,
  • Gaojie Zhang

摘要

Ultra-precision grinding is pivotal for 4H-SiC substrates, yet the relative roles of normal force and grit depth of cut (GDoC) in damage formation remain disputed. We use a simulation-led molecular dynamics (MD) framework, validated by nano-scratch cross-sections, to decouple force and GDoC under constant-load and constant-GDoC protocols. Results show that GDoC governs stress-field penetration and subsurface damage (SSD) signatures, and therefore the brittle–ductile transition. Transmission electron microscopy (TEM) observations of slip bands, microcracks, and SSD depth agree with simulated stress localization and defect evolution, supporting a geometry-controlled damage mechanism. The findings guide prioritization of depth-related control metrics for low-damage machining of 4H-SiC and other brittle substrates.