<p>Tin monosulfide (SnS) nanocrystalline thin films were formed on glass and fluorine-doped tin oxide (FTO)/glass substrates at room temperature with different preparation cycles using successive ionic layer adsorption and reaction (SILAR). The film characteristics were examined utilizing x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and ultraviolet–visible (UV–Vis) spectrophotometry. Smooth, homogeneous, and uniform SnS nanocrystalline thin films with a polycrystalline orthorhombic structure were successfully deposited. The photocatalytic degradation of methylene blue dye under visible-light irradiation was found to increase with increasing film thickness. In addition, the photoelectrochemical properties and the linear sweep voltammetry (<i>J</i>–<i>V</i>) of the films exhibited significant sensitivity to visible light. The photoconversion efficiency was enhanced, with an approximately eightfold increase with an increase in film thickness from 233&#xa0;nm to 725&#xa0;nm. The Nyquist plot exhibiting a semicircular shape for SnS thin films prepared with 25, 50, and 75 cycles can be modeled by a corresponding circuit featuring a single RC pair.</p>

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Thickness-Controlled SnS Thin Films Synthesized by SILAR for Visible-Light Photocatalytic and Photoelectrochemical Applications

  • Marwah J. Kadhim,
  • Ali R. Nassar,
  • M. A. Mahdi,
  • J. J. Hassan,
  • Qabas Abdul-Zahra Kazem

摘要

Tin monosulfide (SnS) nanocrystalline thin films were formed on glass and fluorine-doped tin oxide (FTO)/glass substrates at room temperature with different preparation cycles using successive ionic layer adsorption and reaction (SILAR). The film characteristics were examined utilizing x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), and ultraviolet–visible (UV–Vis) spectrophotometry. Smooth, homogeneous, and uniform SnS nanocrystalline thin films with a polycrystalline orthorhombic structure were successfully deposited. The photocatalytic degradation of methylene blue dye under visible-light irradiation was found to increase with increasing film thickness. In addition, the photoelectrochemical properties and the linear sweep voltammetry (JV) of the films exhibited significant sensitivity to visible light. The photoconversion efficiency was enhanced, with an approximately eightfold increase with an increase in film thickness from 233 nm to 725 nm. The Nyquist plot exhibiting a semicircular shape for SnS thin films prepared with 25, 50, and 75 cycles can be modeled by a corresponding circuit featuring a single RC pair.