Scholarlink

<p>This work employs numerical simulation of the directional solidification (DS) process to investigate strategies for enhancing multi-crystalline silicon growth. The study examines the effects of modifying the graphite retort’s dimensions on impurity concentration, power consumption, melt–crystal interface properties, thermal stress, and dislocation density. Melt–crystal interface changes were analyzed at 25%, 50%, and 75% of the solidification phase. Among the tested conditions, multi-crystalline silicon ingots grown under the optimized case 3 configuration (retort width 25&#xa0;mm) exhibited superior quality, with dislocation density reduced by above 10<sup>6</sup>&#xa0;cm<sup>−2</sup>, impurity concentration decreased by 10<sup>14</sup>–10<sup>15</sup> atoms/cm<sup>2</sup>, and reflectivity prediction accuracy of 12.76146%. Although case 3 incurred a slight increase in power consumption, the quality improvements make it suitable for semiconductor and solar cell applications. Machine learning (ML) analysis was applied as a tool to better monitor and control silicon quality rather than as the primary objective. To support this, a multi-crystalline silicon ingot was experimentally grown under case 3 conditions and sliced into wafers. Random forest demonstrated excellent performance in predicting minimal reflectivity, while XGBoost efficiently estimated average and maximum reflectivity, as well as minority carrier lifetime improvements, key parameters for industrial solar cell applications. Unlike previous studies focusing only on process optimization, this work uniquely integrates retort geometry optimization, experimental validation, and ML-based reflectivity prediction, providing a comprehensive framework for high-quality silicon ingot production.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Design Optimization of Graphite Retort and Predictive Modeling of Optical Properties in Multi-crystalline Silicon for Solar Cell Applications

  • 期刊论文

  • 发表日期：

    2026年4月9日

查看全文
  • Mariyappan Raman,
  • S. Arun,
  • M. Srinivasan,
  • Keerthivasan Thamotharan,
  • R. M. Kaviya Sree,
  • Vallidevi Krishnamurthy,
  • Noritaka Usami

摘要

This work employs numerical simulation of the directional solidification (DS) process to investigate strategies for enhancing multi-crystalline silicon growth. The study examines the effects of modifying the graphite retort’s dimensions on impurity concentration, power consumption, melt–crystal interface properties, thermal stress, and dislocation density. Melt–crystal interface changes were analyzed at 25%, 50%, and 75% of the solidification phase. Among the tested conditions, multi-crystalline silicon ingots grown under the optimized case 3 configuration (retort width 25 mm) exhibited superior quality, with dislocation density reduced by above 106 cm−2, impurity concentration decreased by 1014–1015 atoms/cm2, and reflectivity prediction accuracy of 12.76146%. Although case 3 incurred a slight increase in power consumption, the quality improvements make it suitable for semiconductor and solar cell applications. Machine learning (ML) analysis was applied as a tool to better monitor and control silicon quality rather than as the primary objective. To support this, a multi-crystalline silicon ingot was experimentally grown under case 3 conditions and sliced into wafers. Random forest demonstrated excellent performance in predicting minimal reflectivity, while XGBoost efficiently estimated average and maximum reflectivity, as well as minority carrier lifetime improvements, key parameters for industrial solar cell applications. Unlike previous studies focusing only on process optimization, this work uniquely integrates retort geometry optimization, experimental validation, and ML-based reflectivity prediction, providing a comprehensive framework for high-quality silicon ingot production.