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<p>Molecular spintronics integrates the unique electronic and magnetic properties of molecules with conventional magnetic materials to control spin-dependent phenomena at the nanoscale, offering promising routes to low-power, high-density data storage and quantum information processing. Incorporating molecular components into devices such as magnetic tunnel junctions (MTJs) has demonstrated enhanced magnetoresistance and spin filtering effects, highlighting the potential for improved device functionality and performance. There is a general concern about the impact of ambient oxygen on the MTJ ability to form successful molecular bridges. Also, MTJ-based molecular device fabrication requires a photolithography step that includes photoresist baking at 90&#xa0;&#xa0;°C for few minutes. This work investigates electron spin resonance (ESR) in MTJs fabricated as 5-<i>μ</i>m pillar arrays to study the effect of temperature in ambient condition. The MTJs comprise a bottom ferromagnet stack of tantalum (Ta), cobalt (Co), nickel iron (NiFe), an aluminum oxide (AlOₓ) insulating barrier, and a top NiFe ferromagnet. Temperature-dependent ESR studies were also performed on the individual constituent materials and a complete MTJ at room temperature, 60&#xa0;°C, 90&#xa0;°C, and 120&#xa0;°C. The analysis reveals that ferromagnetic materials maintain stable ESR spectra over the examined temperature range, while Ta and AlOx have very weak, but non-monotonic, resonance throughout the temperature range. Additionally, the resonance peaks of the individual materials differ from those of the complete MTJs, indicating that distinct coupling behaviors can be analyzed via ESR for MTJ-based molecular spintronics devices. These findings provide insights into the thermal robustness of Ta/Co/NiFe/AlO<sub>x</sub>/NiFe MTJ-based molecular spintronics devices.</p>

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Electron Spin Resonance Gauging the Effect of Temperature on Magnetic Tunnel Junctions and its Constituents Thin-films

  • 期刊论文

  • 发表日期：

    2026年4月7日

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  • Hayden Brown,
  • Omari Kirkland,
  • Pawan Tyagi

摘要

Molecular spintronics integrates the unique electronic and magnetic properties of molecules with conventional magnetic materials to control spin-dependent phenomena at the nanoscale, offering promising routes to low-power, high-density data storage and quantum information processing. Incorporating molecular components into devices such as magnetic tunnel junctions (MTJs) has demonstrated enhanced magnetoresistance and spin filtering effects, highlighting the potential for improved device functionality and performance. There is a general concern about the impact of ambient oxygen on the MTJ ability to form successful molecular bridges. Also, MTJ-based molecular device fabrication requires a photolithography step that includes photoresist baking at 90  °C for few minutes. This work investigates electron spin resonance (ESR) in MTJs fabricated as 5-μm pillar arrays to study the effect of temperature in ambient condition. The MTJs comprise a bottom ferromagnet stack of tantalum (Ta), cobalt (Co), nickel iron (NiFe), an aluminum oxide (AlOₓ) insulating barrier, and a top NiFe ferromagnet. Temperature-dependent ESR studies were also performed on the individual constituent materials and a complete MTJ at room temperature, 60 °C, 90 °C, and 120 °C. The analysis reveals that ferromagnetic materials maintain stable ESR spectra over the examined temperature range, while Ta and AlOx have very weak, but non-monotonic, resonance throughout the temperature range. Additionally, the resonance peaks of the individual materials differ from those of the complete MTJs, indicating that distinct coupling behaviors can be analyzed via ESR for MTJ-based molecular spintronics devices. These findings provide insights into the thermal robustness of Ta/Co/NiFe/AlOx/NiFe MTJ-based molecular spintronics devices.