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<p>Heterostructures with new material combinations are being investigated to improve device functionality, especially hybrid two-dimensional/three-dimensional (2D/3D) material structures. In this report, bonded graphene/GaN structures with various GaN surface pretreatment conditions are studied using temperature-dependent current–voltage and x-ray photoelectron spectroscopy (XPS) measurements. The HCl and H<sub>2</sub> + N<sub>2</sub>, H<sub>2</sub>, and O<sub>2</sub> plasma treatments explored here affect the GaN surface states and oxidation, which in turn affect the diode IV performance. The barrier heights for all samples were similar at ~0.8&#xa0;eV, and this finding was supported by XPS measurements. The O<sub>2</sub> plasma treated sample formed a thicker oxide interlayer as evidenced by XPS measurements and had a higher series resistance. Some of the diodes exhibited parallel current leakage probably via GaN dislocations. Ideality factors for all samples were less than 2, with the H<sub>2</sub> + N<sub>2</sub> plasma treated sample having the lowest ideality factor of 1.25 at 115°C, suggesting this plasma treatment passivates the GaN surface states more effectively.</p>

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Effect of Surface Treatment on Interface Properties of Bonded Graphene/GaN Structures

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月12日

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  • Eric W. Blanton,
  • Michael A. Altvater,
  • Bridget Rogers,
  • Nicholas R. Glavin,
  • Michael Snure

摘要

Heterostructures with new material combinations are being investigated to improve device functionality, especially hybrid two-dimensional/three-dimensional (2D/3D) material structures. In this report, bonded graphene/GaN structures with various GaN surface pretreatment conditions are studied using temperature-dependent current–voltage and x-ray photoelectron spectroscopy (XPS) measurements. The HCl and H2 + N2, H2, and O2 plasma treatments explored here affect the GaN surface states and oxidation, which in turn affect the diode IV performance. The barrier heights for all samples were similar at ~0.8 eV, and this finding was supported by XPS measurements. The O2 plasma treated sample formed a thicker oxide interlayer as evidenced by XPS measurements and had a higher series resistance. Some of the diodes exhibited parallel current leakage probably via GaN dislocations. Ideality factors for all samples were less than 2, with the H2 + N2 plasma treated sample having the lowest ideality factor of 1.25 at 115°C, suggesting this plasma treatment passivates the GaN surface states more effectively.