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<p>The variation in abrasive rotational speed inevitably leads to surface damage on silicon wafers due to contact impact forces and shear forces. To investigate the effect of rotational speed on the evolution of subsurface micro-damage during the nano-polishing process, this study employs molecular dynamics, combined with the Weierstrass–Mandelbrot function to construct a random rough surface. Various potential functions are coupled to provide the force field, establishing a molecular dynamics model for the silicon wafer’s random rough surface. The surface and subsurface damage evolution behaviors during nano-polishing are analyzed. By analyzing the surface morphology and roughness variation curves, it is revealed that the rotational speed influences the surface roughness (Sa) in a nonlinear pattern, showing a “concave to convex” trend. Furthermore, using the diamond structure recognition method, combined with stress-strain distribution and slip band evolution, the dynamic behavior of dislocations at the junction of high and low-stress regions beneath the surface is explored. Process efficiency is closely linked to rotational speed. Both wafer processing time and production throughput are significantly impacted when the rotational speed decreases. Lower speeds (50–100&#xa0;m/s) can yield reduced surface roughness and more stable dislocation behavior. However, they also lead to a substantial decrease in the material removal rate per unit time. To achieve the target polishing precision, the processing time must be considerably extended. The results show that at a rotational speed of 200&#xa0;m/s, the roughness value is low (Sa = 5.6&#xa0;nm), the surface quality is good, and subsurface damage is minimal. At rotational speeds between 50&#xa0;m/s and 100&#xa0;m/s, the roughness decreases, stress concentration weakens, and dislocations tend to stabilize. At 150&#xa0;m/s, dislocation evolution becomes active, roughness reaches its peak (Sa = 6.7&#xa0;nm). When the speed increases to 250–300&#xa0;m/s, slip band motion intensifies, subsurface damage increases, and surface quality deteriorates. Although the roughness value is minimal at 300&#xa0;m/s (Sa = 4.1&#xa0;nm), excessive impact forces lead to material instability. This study provides theoretical guidance for optimizing nano-polishing processes.</p>

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Evolution and Propagation of Subsurface Micro-Damage in Silicon Wafers Induced by Silica Abrasive Polishing

  • 期刊论文

  • 发表日期：

    2026年4月27日

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  • Xiaohui Zhang,
  • Yuanliang Wu,
  • Duo Zou,
  • Zengguang Lai,
  • Jiao Li,
  • Guoxing Tang

摘要

The variation in abrasive rotational speed inevitably leads to surface damage on silicon wafers due to contact impact forces and shear forces. To investigate the effect of rotational speed on the evolution of subsurface micro-damage during the nano-polishing process, this study employs molecular dynamics, combined with the Weierstrass–Mandelbrot function to construct a random rough surface. Various potential functions are coupled to provide the force field, establishing a molecular dynamics model for the silicon wafer’s random rough surface. The surface and subsurface damage evolution behaviors during nano-polishing are analyzed. By analyzing the surface morphology and roughness variation curves, it is revealed that the rotational speed influences the surface roughness (Sa) in a nonlinear pattern, showing a “concave to convex” trend. Furthermore, using the diamond structure recognition method, combined with stress-strain distribution and slip band evolution, the dynamic behavior of dislocations at the junction of high and low-stress regions beneath the surface is explored. Process efficiency is closely linked to rotational speed. Both wafer processing time and production throughput are significantly impacted when the rotational speed decreases. Lower speeds (50–100 m/s) can yield reduced surface roughness and more stable dislocation behavior. However, they also lead to a substantial decrease in the material removal rate per unit time. To achieve the target polishing precision, the processing time must be considerably extended. The results show that at a rotational speed of 200 m/s, the roughness value is low (Sa = 5.6 nm), the surface quality is good, and subsurface damage is minimal. At rotational speeds between 50 m/s and 100 m/s, the roughness decreases, stress concentration weakens, and dislocations tend to stabilize. At 150 m/s, dislocation evolution becomes active, roughness reaches its peak (Sa = 6.7 nm). When the speed increases to 250–300 m/s, slip band motion intensifies, subsurface damage increases, and surface quality deteriorates. Although the roughness value is minimal at 300 m/s (Sa = 4.1 nm), excessive impact forces lead to material instability. This study provides theoretical guidance for optimizing nano-polishing processes.