<p>Flexible nanostructured thin-film solar cells for wearable electronics can degrade under bending because mechanical strain activates defects and weakens interfaces. We develop a strain-aware single-diode model that links bending radius to device performance by coupling strain to diode parameters. The photogenerated current density (<i>J</i>_ph) and saturation current density (<i>J</i>₀) are expressed as strain-dependent terms using sensitivity coefficients α and β, representing reduced carrier collection and enhanced recombination, respectively. Nanostructure light trapping is included through a photoelectric current enhancement factor <i>E</i>_n, defined as a multiplicative scaling of <i>J</i>_ph in the flat state. The framework is applied to 10 bending levels from flat to a radius of 5 mm to predict variations in current–voltage (I–V) behavior that reduce short-circuit current density (<i>J</i>_sc), open-circuit voltage (<i>V</i>_oc), fill factor (FF), maximum power, and efficiency, together with the evolution of light and dark current components. The results provide a compact design screening tool and clarify strain sensitivities, while highlighting continued need for experimental calibration and validation. </p> Graphical Abstract <p></p>