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<p>Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) thin film ferroelectrics (FEs) offer high scalability and complementary metal–oxide semiconductor (CMOS) compatibility, yet their performance is strongly influenced by electrode-induced stress and interfacial chemistry. This work compared three capacitor configurations: Mo/HZO/Mo, Mo/HZO/W, and W/HZO/Mo, to reveal the synergistic effects of mechanical stress and interface chemistry on the FE and reliability of the HZO thin film. The results showed that the symmetric Mo/HZO/Mo stack had the highest <i>o</i>-phase fraction (66.2%), while the asymmetric Mo/HZO/W stack achieved the maximum 2<i>P</i><sub>r</sub> (52.0&#xa0;μC&#xa0;cm<sup>−2</sup>) at 4.0&#xa0;MV&#xa0;cm<sup>−1</sup>, which was superior to previous similar studies. In addition, the Mo/HZO/W stack exhibited the lowest leakage current density (1.2 × 10<sup>−4</sup>&#xa0;A&#xa0;cm<sup>−2</sup> at 3.0&#xa0;MV&#xa0;cm<sup>−1</sup>) and excellent durability (&gt; 10<sup>9</sup> cycles), attributed to the high work function and oxidation resistance of the W electrode. In contrast, the W/HZO/Mo stack had the best retention characteristics owing to the stability of the bottom W interface (99.1% retention after 3.5 × 10<sup>4</sup>&#xa0;s). These findings indicate that the Mo/HZO/W stack achieved the optimal balance between polarization strength and operational reliability, providing important references for the design of high performance HZO-based memory devices.</p>

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Enhanced Ferroelectricity and Reliability in Hf0.5Zr0.5O2 Thin Film via Synergistic Stress-Interface Effects from a W Top Electrode

  • 期刊论文

  • 发表日期：

    2026年4月8日

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  • Dao Wang,
  • Yan Zhang,
  • Fan Xu,
  • Xin-Yuan Wang,
  • Zi-Hao Lu,
  • Hui-Wen Fu,
  • Dan-Feng He

摘要

Hf0.5Zr0.5O2 (HZO) thin film ferroelectrics (FEs) offer high scalability and complementary metal–oxide semiconductor (CMOS) compatibility, yet their performance is strongly influenced by electrode-induced stress and interfacial chemistry. This work compared three capacitor configurations: Mo/HZO/Mo, Mo/HZO/W, and W/HZO/Mo, to reveal the synergistic effects of mechanical stress and interface chemistry on the FE and reliability of the HZO thin film. The results showed that the symmetric Mo/HZO/Mo stack had the highest o-phase fraction (66.2%), while the asymmetric Mo/HZO/W stack achieved the maximum 2Pr (52.0 μC cm−2) at 4.0 MV cm−1, which was superior to previous similar studies. In addition, the Mo/HZO/W stack exhibited the lowest leakage current density (1.2 × 10−4 A cm−2 at 3.0 MV cm−1) and excellent durability (> 109 cycles), attributed to the high work function and oxidation resistance of the W electrode. In contrast, the W/HZO/Mo stack had the best retention characteristics owing to the stability of the bottom W interface (99.1% retention after 3.5 × 104 s). These findings indicate that the Mo/HZO/W stack achieved the optimal balance between polarization strength and operational reliability, providing important references for the design of high performance HZO-based memory devices.