Topographical Study of Symmetry in Single-Crystal Graphene Grown via Chemical Vapor Deposition
摘要
The growth of graphene crystals on polycrystalline copper foils through chemical vapor deposition (CVD) is influenced by a combination of thermodynamic, kinetic, and environmental factors, contributing to the variety of island shapes. In this study, we applied two treatment techniques, copper foil pre-oxidation and copper enclosure, to reduce the nucleation density. Furthermore, we utilized atomic force microscopy (AFM) to investigate the distinct forms of graphene crystals that are synthesized on the inner surface of copper enclosures via low-pressure CVD. Notably, our findings reveal that the graphene crystals tend to form below the adjacent surface, as demonstrated by cross-sectional AFM scans. In addition, our study suggests that an impurity-assisted mechanism plays a key role in driving isotropic diffusion, leading to the formation of twofold, fourfold, and sixfold symmetries in graphene flakes.