Raman spectroscopy with a 532 nm laser excitation was employed to investigate line intensity ratios and linewidths in mechanically exfoliated graphene in various configurations: single-layer graphene ( \(G_{1L}\) ), double-layer graphene ( \(G_{2L}\) ), multilayer graphene ( \(G_{ML}\) ), and hBN-graphene heterostructures. The \(I_{2D} / I_{G}\) peak ratio ranges from approximately 2.49−3.5 for \(G_{1L}\) with a full-width at half-maximum (FWHM) of 32 \(\mathrm{{cm^{-1}}}\) , 0.75–1 for \(G_{2L}\) , and 0.42–0.54 for \(G_{ML}\) . In contrast, hBN/ \(G_{1L}\) and hBN/ \(G_{1L}\) /hBN heterostructures exhibited enhanced ratios of 6 and 10, respectively, with corresponding full-width at half-maximum values of 26 \(\mathrm{{cm^{-1}}}\) and 20.5 \(\mathrm{{cm^{-1}}}\) , respectively. These results demonstrate that hBN encapsulation significantly improves the structural quality of graphene by reducing defect density.