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<p>The aim of this research is to fabricate and analyze enhancements in the optoelectrical properties of a flexible poly(3-hexylthiophene) (P3HT) transistor with the inclusion of different concentrations of molybdenum disulfide (MoS<sub>2</sub>). The films were fabricated via the spin-coating technique followed by thermal annealing to remove the internal stress and increase the concentration. The fabricated transistor included polyimide (PI) as the transistor substrate, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a gate electrode, polymethyl methacrylate (PMMA) as the transistor dielectric layer, and copper (Cu) material for drain contact. Different compositions of the P3HT/MoS<sub>2</sub> active layer were examined for optimized performance. The results showed that optimal performance was achieved with the P3HT/1&#xa0;wt.% MoS<sub>2</sub> composition, exhibiting a drain current of 4.5 × 10<sup>−6</sup> A, an on/off ratio of 10<sup>3</sup>, and a threshold voltage of −2.1&#xa0;V. The optical analyses revealed enhanced photocurrent (1.94 µA), responsivity (0.92), and external quantum efficiency (EQE) of 74.6%. Thus, the present paper addressed the literature gap and improved the optoelectrical properties of P3HT-based flexible transistors with the addition of MoS<sub>2</sub>, making it a promising material for high-performance flexible device applications.</p>

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Preparation and Enhancement of Optoelectrical Properties of Poly(3-hexylthiophene-2,5-diyl) Flexible Transistor Inclusion with Molybdenum Disulfide

  • 期刊论文

  • 发表日期：

    2026年3月26日

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  • T. Thirugnanasambandham,
  • Ravindra Pratap Singh,
  • Avinash Gudimetla,
  • Amit Kumar,
  • P. S. Ranjit,
  • Sudhanshu Dev,
  • Ponmurugan Panneerselvam,
  • Ramya Maranan,
  • S Sathiyamurthy,
  • Barun Haldar

摘要

The aim of this research is to fabricate and analyze enhancements in the optoelectrical properties of a flexible poly(3-hexylthiophene) (P3HT) transistor with the inclusion of different concentrations of molybdenum disulfide (MoS2). The films were fabricated via the spin-coating technique followed by thermal annealing to remove the internal stress and increase the concentration. The fabricated transistor included polyimide (PI) as the transistor substrate, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) as a gate electrode, polymethyl methacrylate (PMMA) as the transistor dielectric layer, and copper (Cu) material for drain contact. Different compositions of the P3HT/MoS2 active layer were examined for optimized performance. The results showed that optimal performance was achieved with the P3HT/1 wt.% MoS2 composition, exhibiting a drain current of 4.5 × 10−6 A, an on/off ratio of 103, and a threshold voltage of −2.1 V. The optical analyses revealed enhanced photocurrent (1.94 µA), responsivity (0.92), and external quantum efficiency (EQE) of 74.6%. Thus, the present paper addressed the literature gap and improved the optoelectrical properties of P3HT-based flexible transistors with the addition of MoS2, making it a promising material for high-performance flexible device applications.