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<p>The environmentally friendly semiconductor material α-SrSi<sub>2</sub> is a carrier-enhancement-type thermoelectric conversion material that operates at room to intermediate temperatures. It exhibits a small, but measurable, bandgap in its undoped state. However, with the addition of significant <i>n</i>-type or <i>p</i>-type impurities, the bandgap decreases owing to effects such as localization order, so it is important to retain a significant bandgap value for the α-SrSi<sub>2</sub> matrix. This study focuses on the role of isoelectronic impurities, particularly ones replacing at Si sites. Tin (Sn) was selected for our study on the basis of first-principles calculations using a hybrid functional model. The resulting changes in the bandgap value and electrical and thermoelectric properties of the α-SrSi<sub>2</sub> matrix were investigated. For synthesis, both the melt-growth method, which is a thermal equilibrium process, and the plasma-activated sintering process, which is a non-thermalequilibrium process, have been investigated. The α-SrSi<sub>2</sub> base matrix was prepared by the melt-growth method, and single-phase α-SrSi<sub>2</sub> with sufficient suppression of process impurities was obtained. Changes in the lattice constant due to the addition of Sn were observed, and it could be detected that Sn can structurally affect the material. Using the melt-growth method, addition of 0.5 at.% Sn resulted in a bandgap value of 64.7&#xa0;meV. When the plasma-activated sintering process was used to add Sn, a process-dependent decrease in the bandgap value was observed as the Sn addition concentration was increased.</p>

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Effect of Tin Doping on the Bandgap and Electrical and Thermoelectric Properties of Narrow-Gap Semiconducting α-SrSi2

  • 期刊论文

  • 发表日期：

    2026年3月12日

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  • Rena Hatanaka,
  • Haruno Kunioka,
  • Hiroya Oishi,
  • Hirari Suzuki,
  • Taishi Miyagawa,
  • Yoji Imai,
  • Tsutomu Iida

摘要

The environmentally friendly semiconductor material α-SrSi2 is a carrier-enhancement-type thermoelectric conversion material that operates at room to intermediate temperatures. It exhibits a small, but measurable, bandgap in its undoped state. However, with the addition of significant n-type or p-type impurities, the bandgap decreases owing to effects such as localization order, so it is important to retain a significant bandgap value for the α-SrSi2 matrix. This study focuses on the role of isoelectronic impurities, particularly ones replacing at Si sites. Tin (Sn) was selected for our study on the basis of first-principles calculations using a hybrid functional model. The resulting changes in the bandgap value and electrical and thermoelectric properties of the α-SrSi2 matrix were investigated. For synthesis, both the melt-growth method, which is a thermal equilibrium process, and the plasma-activated sintering process, which is a non-thermalequilibrium process, have been investigated. The α-SrSi2 base matrix was prepared by the melt-growth method, and single-phase α-SrSi2 with sufficient suppression of process impurities was obtained. Changes in the lattice constant due to the addition of Sn were observed, and it could be detected that Sn can structurally affect the material. Using the melt-growth method, addition of 0.5 at.% Sn resulted in a bandgap value of 64.7 meV. When the plasma-activated sintering process was used to add Sn, a process-dependent decrease in the bandgap value was observed as the Sn addition concentration was increased.