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<p>Cadmium sulfide (CdS) has long been used as the conventional buffer layer in copper indium gallium selenide (CIGS) thin-film solar cells, however, its inherent toxicity and significant optical absorption losses in the short-wavelength region create critical challenges for sustainable photovoltaic development, prompting extensive research to overcome these limitations. In this study, we introduce zinc stannate (Zn<sub>2</sub>SnO<sub>4</sub>) as an environmentally friendly, high-efficiency buffer layer to replace CdS in CIGS thin-film solar cells as a practically viable device through comprehensive numerical simulation using SCAPS-1D software. We demonstrate that ZTO-buffered CIGS devices achieve remarkable power conversion efficiencies (PCE) exceeding 30% at an optimized bandgap of 1.4&#xa0;eV. Compared to CdS (~2.4&#xa0;eV), ZTO possesses a wider bandgap (~3.6&#xa0;eV) that enables enhanced short-wavelength photon transmission, while its favorable conduction band alignment suppresses parasitic absorption and interface recombination losses. Notably, ZTO buffer layer exhibit excellent performance across thickness variations of 20-100&#xa0;nm, providing a wide operational window that simplifies manufacturing processes and reduces production costs. Furthermore, the integration of highly conductive molybdenum (Mo) back contacts optimizes device performance by suppressing series resistance losses and enhancing fill factor (FF%). Our findings establish zinc stannate as a cadmium-free, cost-effective solution that not only matches but surpasses conventional CdS performance, paving the way for next-generation sustainable CIGS photovoltaic technology with improved efficiency and reduced environmental impact.</p>

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Numerical Simulation of a New Architectural Design of CIGS Thin Film Solar Cell with Zinc Stannate Buffer Layer Using SCAPS-1D

  • 期刊论文

  • 发表日期：

    2026年3月17日

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  • Rasika N. Mohottige,
  • E. G. D. K. Chandrarathne,
  • K. A. S. Lakshan,
  • Sandanuwan P. Kalawila Vithanage,
  • Steven Maier,
  • Jennifer Sattler

摘要

Cadmium sulfide (CdS) has long been used as the conventional buffer layer in copper indium gallium selenide (CIGS) thin-film solar cells, however, its inherent toxicity and significant optical absorption losses in the short-wavelength region create critical challenges for sustainable photovoltaic development, prompting extensive research to overcome these limitations. In this study, we introduce zinc stannate (Zn2SnO4) as an environmentally friendly, high-efficiency buffer layer to replace CdS in CIGS thin-film solar cells as a practically viable device through comprehensive numerical simulation using SCAPS-1D software. We demonstrate that ZTO-buffered CIGS devices achieve remarkable power conversion efficiencies (PCE) exceeding 30% at an optimized bandgap of 1.4 eV. Compared to CdS (~2.4 eV), ZTO possesses a wider bandgap (~3.6 eV) that enables enhanced short-wavelength photon transmission, while its favorable conduction band alignment suppresses parasitic absorption and interface recombination losses. Notably, ZTO buffer layer exhibit excellent performance across thickness variations of 20-100 nm, providing a wide operational window that simplifies manufacturing processes and reduces production costs. Furthermore, the integration of highly conductive molybdenum (Mo) back contacts optimizes device performance by suppressing series resistance losses and enhancing fill factor (FF%). Our findings establish zinc stannate as a cadmium-free, cost-effective solution that not only matches but surpasses conventional CdS performance, paving the way for next-generation sustainable CIGS photovoltaic technology with improved efficiency and reduced environmental impact.