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<p>The dispersion stability of fumed silica slurry is crucial to the performance of the chemical mechanical polishing process. This study employs a multi-scale approach to investigate their dispersibility. At the nanoscale, dynamic light scattering, zeta potential measurements, and transmission electron microscopy confirm that the slurry exhibits the highest dispersibility and stability at an initial pH of 13.0. At this pH, hydroxyl groups on silica particle surfaces are fully dissociated, forming a stable double layer structure that effectively inhibits particle aggregation. At the mesoscale, rheological analysis indicates the lowest gelation degree and optimal fluidity for this slurry. At the macroscale, sedimentation experiments further validate its stability; LUMiFuge testing reveals the lowest centrifugal instability index under these conditions, at merely 0.369. Under optimal operating conditions, this slurry achieves a silica removal rate of up to 2312&#xa0;Å/min while reducing oxide wafer surface roughness to 0.221&#xa0;nm. These findings provide crucial theoretical foundations for optimizing the performance of chemical mechanical polishing slurries.</p>

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Multiscale Stability Analysis of Fumed Silica Dispersions for Chemical Mechanical Polishing

  • 期刊论文

  • 发表日期：

    2026年2月28日

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  • Xusheng Cao,
  • Chong Luo,
  • Ziming Zhu,
  • Shigong Fu,
  • Anlan Liu

摘要

The dispersion stability of fumed silica slurry is crucial to the performance of the chemical mechanical polishing process. This study employs a multi-scale approach to investigate their dispersibility. At the nanoscale, dynamic light scattering, zeta potential measurements, and transmission electron microscopy confirm that the slurry exhibits the highest dispersibility and stability at an initial pH of 13.0. At this pH, hydroxyl groups on silica particle surfaces are fully dissociated, forming a stable double layer structure that effectively inhibits particle aggregation. At the mesoscale, rheological analysis indicates the lowest gelation degree and optimal fluidity for this slurry. At the macroscale, sedimentation experiments further validate its stability; LUMiFuge testing reveals the lowest centrifugal instability index under these conditions, at merely 0.369. Under optimal operating conditions, this slurry achieves a silica removal rate of up to 2312 Å/min while reducing oxide wafer surface roughness to 0.221 nm. These findings provide crucial theoretical foundations for optimizing the performance of chemical mechanical polishing slurries.