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<p>Ga-based liquid metals are widely used in flexible electronic micro-interconnections due to their unique combination of metallic and fluidic properties. (111)-Oriented nanotwinned Cu (nt-Cu) is a newly developed under-bump metallization (UBM) for three-dimensional (3D) packaging technology. This study investigates the formation and growth mechanisms of interfacial CuGa<sub>2</sub> intermetallic compound (IMC) on both (111)-oriented nt-Cu and conventional polycrystalline Cu substrates at 150°C. Compared to polycrystalline Cu, (111)-oriented nt-Cu substrate significantly retards the growth kinetics of interfacial CuGa<sub>2</sub>. Distinct roof-type CuGa<sub>2</sub> grains with a strong (102) preferred orientation form on (111)-oriented nt-Cu, whereas randomly oriented brick-type CuGa<sub>2</sub> grains form on polycrystalline Cu. The initial (102) preferential orientation of CuGa<sub>2</sub> grains on (111)-oriented nt-Cu remains stable even after an extended reaction time of 20&#xa0;min. The smallest atomic misfit (10.17 %) occurs between the &lt;110&gt; direction on the {111}<sub>cu</sub> plane and the &lt;010&gt; direction on the {102}<sub>CuGa2</sub> plane. The preferred orientation relationships between the roof-type CuGa<sub>2</sub> grains and the (111)-oriented nt-Cu are identified as follows: {102}<sub>CuGa2</sub>||{111}<sub>Cu</sub> and &lt;010&gt;<sub>CuGa2</sub>||&lt;110&gt;<sub>Cu</sub>; {102}<sub>CuGa2</sub>||{111}<sub>Cu</sub> and &lt;201&gt;<sub>CuGa2</sub>||&lt;112&gt;<sub>Cu</sub>. This study provides fundamental insights into interfacial reactions at (111)-oriented nt-Cu UBMs for Ga-based liquid metal flexible micro-interconnects.</p>

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Formation and Growth Mechanisms of Preferentially Oriented Roof-type CuGa2 Grains on (111) Nanotwinned Cu

  • 期刊论文

  • 发表日期：

    2026年2月17日

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  • S. Meng,
  • X. Y. Liu,
  • M. L. Huang

摘要

Ga-based liquid metals are widely used in flexible electronic micro-interconnections due to their unique combination of metallic and fluidic properties. (111)-Oriented nanotwinned Cu (nt-Cu) is a newly developed under-bump metallization (UBM) for three-dimensional (3D) packaging technology. This study investigates the formation and growth mechanisms of interfacial CuGa2 intermetallic compound (IMC) on both (111)-oriented nt-Cu and conventional polycrystalline Cu substrates at 150°C. Compared to polycrystalline Cu, (111)-oriented nt-Cu substrate significantly retards the growth kinetics of interfacial CuGa2. Distinct roof-type CuGa2 grains with a strong (102) preferred orientation form on (111)-oriented nt-Cu, whereas randomly oriented brick-type CuGa2 grains form on polycrystalline Cu. The initial (102) preferential orientation of CuGa2 grains on (111)-oriented nt-Cu remains stable even after an extended reaction time of 20 min. The smallest atomic misfit (10.17 %) occurs between the <110> direction on the {111}cu plane and the <010> direction on the {102}CuGa2 plane. The preferred orientation relationships between the roof-type CuGa2 grains and the (111)-oriented nt-Cu are identified as follows: {102}CuGa2||{111}Cu and <010>CuGa2||<110>Cu; {102}CuGa2||{111}Cu and <201>CuGa2||<112>Cu. This study provides fundamental insights into interfacial reactions at (111)-oriented nt-Cu UBMs for Ga-based liquid metal flexible micro-interconnects.