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<p>Bulk CuBiSe<sub>2</sub> was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe<sub>2</sub>, and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe<sub>2</sub> thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe<sub>2</sub> films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe<sub>2</sub> films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe<sub>2</sub> thin films hold significant potential as effective absorber layers in optoelectronic applications.</p>

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Thickness-Dependent Opto-Structural Properties of CuBiSe2 Films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月13日

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  • A. R. Shalaby,
  • Ahmed F. Mabied,
  • Mai. F. M. Hmamm,
  • I. T. Zedan,
  • E. M. El-Menyawy

摘要

Bulk CuBiSe2 was prepared by direct fusion of the constituent elements and was found to be thermally stable up to 620°C. X-ray photoelectron spectroscopy was used to determine the chemical composition of the synthesized CuBiSe2, and x-ray diffraction (XRD) confirmed its polycrystalline nature. CuBiSe2 thin films with thicknesses ranging from 30 nm to 122 nm were deposited using a thermal evaporation technique. The XRD patterns of the films exhibited a nanostructure profile. Thermogravimetric analysis (TG) revealed a crystallization temperature and melting point of 570°C and 620°C, respectively. The morphology and surface roughness of the CuBiSe2 films were investigated using high-resolution transmission electron microscopy and atomic force microscopy. The optical functions were calculated from the transmittance and reflectance spectra of the CuBiSe2 films, and a direct transition was found to be dominant. In addition, a single-oscillator model was found to be suitable for extracting the dispersion parameters. Overall, the results indicate that CuBiSe2 thin films hold significant potential as effective absorber layers in optoelectronic applications.