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<p>A memristor is a nonlinear electronic component with memory function, whereas traditional devices typically exhibit only a single characteristic, either analog or digital. In this study, a dual-mode memristor with an Au (top)/α-MnO<sub>2</sub>/ITO (bottom) structure was fabricated by modulating the α-MnO<sub>2</sub> thin film through interface engineering. The device achieves controllable switching between analog and digital resistance states via voltage modulation. In the low-voltage region (&lt;&#xa0;1.4&#xa0;V), the resistance shows gradual change, demonstrating synaptic-like analog resistive switching behavior. In the medium voltage range (1.4–1.9&#xa0;V), resistive switching (RS) and negative differential resistance (NDR) effects coexist under ambient atmospheric conditions. In the high-voltage region (2V), stable digital resistive switching characteristics are observed. By fitting I–V curves across different voltage ranges, the physical mechanisms of different modes are revealed: the low-field region (&lt;&#xa0;1.4&#xa0;V) is dominated by ohmic conduction, the medium-field region (1.4–1.9&#xa0;V) follows a combined mechanism of ohmic conduction and Fowler–Nordheim emission, while the high-field region (2&#xa0;V) establishes a multi-mechanism coupled conduction model based on ohmic conduction, Poole–Frenkel emission, and SCLC mechanisms. This work provides a novel solution for the co-realization of synaptic plasticity and digital logic in memory-computing integrated architectures.</p> Graphical Abstract <p></p>

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Interface-Engineered Au/α-MnO2/ITO Dual-Mode Memristor: Voltage-Controlled Analog–Digital Switching and Conduction Mechanism Analysis

  • 期刊论文

  • 发表日期：

    2025年12月26日

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  • Rongxin Dong,
  • Jinhua Lao,
  • Jianwen Chen,
  • Si Liu,
  • Peng Xiao,
  • Ni Xiao,
  • Xiucai Wang,
  • Xinmei Yu

摘要

A memristor is a nonlinear electronic component with memory function, whereas traditional devices typically exhibit only a single characteristic, either analog or digital. In this study, a dual-mode memristor with an Au (top)/α-MnO2/ITO (bottom) structure was fabricated by modulating the α-MnO2 thin film through interface engineering. The device achieves controllable switching between analog and digital resistance states via voltage modulation. In the low-voltage region (< 1.4 V), the resistance shows gradual change, demonstrating synaptic-like analog resistive switching behavior. In the medium voltage range (1.4–1.9 V), resistive switching (RS) and negative differential resistance (NDR) effects coexist under ambient atmospheric conditions. In the high-voltage region (2V), stable digital resistive switching characteristics are observed. By fitting I–V curves across different voltage ranges, the physical mechanisms of different modes are revealed: the low-field region (< 1.4 V) is dominated by ohmic conduction, the medium-field region (1.4–1.9 V) follows a combined mechanism of ohmic conduction and Fowler–Nordheim emission, while the high-field region (2 V) establishes a multi-mechanism coupled conduction model based on ohmic conduction, Poole–Frenkel emission, and SCLC mechanisms. This work provides a novel solution for the co-realization of synaptic plasticity and digital logic in memory-computing integrated architectures.

Graphical Abstract