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<p>Large-area, high-efficiency perovskite solar cells (PSCs) have attracted intensive interest for their carbon neutrality. Specifically, semitransparent PSCs have a unique advantage for use in vehicles, buildings, and agriculture. In the inner structure, a layer of tin-doped indium oxide (In<sub>2</sub>O<sub>3</sub>:Sn, ITO) film with high electrical conductivity and transparency is used as the transparent electrode for semitransparent PSCs. Among various methods, magnetron sputtering is considered the best choice for the deposition of a large-area ITO layer during the many processes in PSC production. In this work, we used direct-current magnetron sputtering to deposit ITO films. By varying the sputtering pressure, we obtained the optimal parameters for film production. The ITO film showed low sheet resistance (30–42 Ω/sq), low resistivity (5.18 × 10<sup>−4</sup> Ω·cm), high carrier concentration (5.94 × 10<sup>21</sup> /cm<sup>3</sup>), and high mobility (23.89 cm<sup>2</sup>/V·s). On this basis, we further prepared large-area semitransparent PSCs, demonstrating power conversion efficiency (PCE) of 14.90%, with a large active area of 64.8 cm<sup>2</sup>, which is highly competitive among current semitransparent PSCs (ST-PSCs).</p> Graphical Abstract <p></p>

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Magnetron Sputtering Production of High-Quality ITO Layer for Large-Area Semitransparent Perovskite Solar Cells

  • 期刊论文

  • 发表日期：

    2026年1月3日

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  • Yunlei Jiang,
  • Tianyu Yu,
  • Renjie Hua,
  • Suxia Liang,
  • Luping Lyu,
  • Yuan Dong

摘要

Large-area, high-efficiency perovskite solar cells (PSCs) have attracted intensive interest for their carbon neutrality. Specifically, semitransparent PSCs have a unique advantage for use in vehicles, buildings, and agriculture. In the inner structure, a layer of tin-doped indium oxide (In2O3:Sn, ITO) film with high electrical conductivity and transparency is used as the transparent electrode for semitransparent PSCs. Among various methods, magnetron sputtering is considered the best choice for the deposition of a large-area ITO layer during the many processes in PSC production. In this work, we used direct-current magnetron sputtering to deposit ITO films. By varying the sputtering pressure, we obtained the optimal parameters for film production. The ITO film showed low sheet resistance (30–42 Ω/sq), low resistivity (5.18 × 10−4 Ω·cm), high carrier concentration (5.94 × 1021 /cm3), and high mobility (23.89 cm2/V·s). On this basis, we further prepared large-area semitransparent PSCs, demonstrating power conversion efficiency (PCE) of 14.90%, with a large active area of 64.8 cm2, which is highly competitive among current semitransparent PSCs (ST-PSCs).

Graphical Abstract