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<p>In this work, the melt-quench method was used to construct a number of sets of borate glasses enhanced with varying concentrations of neodymium (Nd<sub>2</sub>O<sub>3</sub>) oxide. With an increase in Nd<sub>2</sub>O<sub>3</sub>, the density gradually increased from 3.1925 g/cm<sup>3</sup> to 3.2778 g/cm<sup>3</sup>. The effective integration of Nd<sup>3+</sup> ions throughout the glass matrix is confirmed by scanning electron microscope (SEM) with energy-dispersive x-ray spectroscopy. (EDX). Neodymium inclusion causes a substantial structural reorganization inside the borosilicate glass matrix, as confirmed by Fourier transform infrared (FTIR) research. When doped mildly, some structural units, such as BO<sub>4</sub>, are more noticeable, although network disruption increases with higher concentrations. As the frequency increases, the dielectric permittivity (<i>ε</i>′) rapidly drops beyond 50 Hz. Until quantities of 0.75 mol.% are reached, the level of <i>ε</i>′ gradually drops with Nd doping, after which it increases. Regarding mechanical properties, the Young’s modulus (<i>E</i>), shear modulus (<i>K</i>), and bulk modulus (<i>B</i>) increased steadily (from 80.559 GPa to 81.782 GPa for Young’s modulus), reflecting an improvement in the stiffness and toughness of the Nd-glass with the addition of Nd. the Nd-0.00 sample (which contains no Nd) has the highest EBF values at all discussed mfp’s, especially at 10 mfp, where it reaches approximately 12.4. In contrast, samples such as Nd-0.25 and Nd-1.00 exhibit slightly lower values, with Nd-1.00, for example, reaching approximately 11.8 at the same energy and mfp-value. The glass sample (Nd-0.75) is the best material for microelectronic equipment since it has the fastest transmission speed of all the samples being studied.</p>

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Gamma-Attenuation, Dielectric Behavior, and Structure of Nd3+-Modified Borosilicate Glasses: A Potential Electronic Encapsulation Material

  • 期刊论文

  • 发表日期：

    2025年12月3日

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  • Gharam A. Alharshan,
  • Shaaban M. Shaaban,
  • Shimaa Ali Said,
  • R. A. Elsad,
  • Mohamed Elsafi

摘要

In this work, the melt-quench method was used to construct a number of sets of borate glasses enhanced with varying concentrations of neodymium (Nd2O3) oxide. With an increase in Nd2O3, the density gradually increased from 3.1925 g/cm3 to 3.2778 g/cm3. The effective integration of Nd3+ ions throughout the glass matrix is confirmed by scanning electron microscope (SEM) with energy-dispersive x-ray spectroscopy. (EDX). Neodymium inclusion causes a substantial structural reorganization inside the borosilicate glass matrix, as confirmed by Fourier transform infrared (FTIR) research. When doped mildly, some structural units, such as BO4, are more noticeable, although network disruption increases with higher concentrations. As the frequency increases, the dielectric permittivity (ε′) rapidly drops beyond 50 Hz. Until quantities of 0.75 mol.% are reached, the level of ε′ gradually drops with Nd doping, after which it increases. Regarding mechanical properties, the Young’s modulus (E), shear modulus (K), and bulk modulus (B) increased steadily (from 80.559 GPa to 81.782 GPa for Young’s modulus), reflecting an improvement in the stiffness and toughness of the Nd-glass with the addition of Nd. the Nd-0.00 sample (which contains no Nd) has the highest EBF values at all discussed mfp’s, especially at 10 mfp, where it reaches approximately 12.4. In contrast, samples such as Nd-0.25 and Nd-1.00 exhibit slightly lower values, with Nd-1.00, for example, reaching approximately 11.8 at the same energy and mfp-value. The glass sample (Nd-0.75) is the best material for microelectronic equipment since it has the fastest transmission speed of all the samples being studied.