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<p>The simultaneous realisation of low subthreshold swing (SS) and negative differential resistance (NDR) in a single nanoscale device remains a major challenge in graphene field-effect transistors (GFETs). In this work, we present a novel co-doping strategy for armchair graphene nanoribbons (AGNRs) that enables steep SS and tuneable NDR together within the same device. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, we analyse four AGNR models co-doped with nitrogen (N) and phosphorus (P) at varying concentrations with P-doped electrodes. Our results reveal that dopant concentration and spatial placement can decouple charge injection from transport pathways, leading to selective enhancement of either strong NDR or high on-current (<i>I</i><sub>on</sub>). Furthermore, introducing a cylindrical gate architecture to the most heavily doped AGNR achieves enhanced electrostatic control and band alignment, resulting in improved <i>I</i><sub>on</sub> and reduced SS. To the best of our knowledge, this is the first demonstration of achieving both low SS and strong NDR in co-doped AGNR-based GFETs through combined bandgap engineering and gate design. These findings open a pathway for low-power, high-speed and multi-valued logic applications, highlighting the potential of co-doped AGNRs as multifunctional building blocks for next-generation nanoelectronics.</p> Graphical Abstract <p></p>

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High-Performance Nitrogen-Phosphorus Co-doped Armchair Graphene Nanoribbon Transistor for Low-Power Applications: A Density Functional Theory Based Investigation

  • 期刊论文

  • 发表日期：

    2025年11月18日

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  • Himanshu Pundir,
  • Sukhbir Singh,
  • Gaurav Sapra,
  • Preetika Sharma

摘要

The simultaneous realisation of low subthreshold swing (SS) and negative differential resistance (NDR) in a single nanoscale device remains a major challenge in graphene field-effect transistors (GFETs). In this work, we present a novel co-doping strategy for armchair graphene nanoribbons (AGNRs) that enables steep SS and tuneable NDR together within the same device. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, we analyse four AGNR models co-doped with nitrogen (N) and phosphorus (P) at varying concentrations with P-doped electrodes. Our results reveal that dopant concentration and spatial placement can decouple charge injection from transport pathways, leading to selective enhancement of either strong NDR or high on-current (Ion). Furthermore, introducing a cylindrical gate architecture to the most heavily doped AGNR achieves enhanced electrostatic control and band alignment, resulting in improved Ion and reduced SS. To the best of our knowledge, this is the first demonstration of achieving both low SS and strong NDR in co-doped AGNR-based GFETs through combined bandgap engineering and gate design. These findings open a pathway for low-power, high-speed and multi-valued logic applications, highlighting the potential of co-doped AGNRs as multifunctional building blocks for next-generation nanoelectronics.

Graphical Abstract