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<p>In this article, an attempt is made to fabricate ZnPc-based organic–inorganic heterojunction photodiode using <i>n</i>-Ge as an inorganic substance. An optical study of ZnPc thin films is examined using UV–visible measurements to note the respective B band (Soret band) and Q band. Structural evaluation of ZnPc thin films is presented using Raman measurements and the suitable existence of vibrational bands found at low, medium, and large wavenumber ranges signifies the footprint of ZnPc molecules. Morphological studies of ZnPc thin films on <i>n</i>-Ge substrate is also revealed using field-emission scanning electron microscopy (FESEM) and cross-sectional FESEM. These studies indicate the grains distributed uniformly over the surface without any surface discontinuity. Assuming thermionic emission theory, current–voltage properties were analyzed for Au/<i>n</i>-Ge metal–semiconductor contact and ZnPc/<i>n</i>-Ge heterojunction with various barrier parameters. Good consistency is observed in the evaluation of barrier parameters among different approaches. Finally, the suitability of ZnPc layer as photoabsorber is studied by applying illumination wavelengths in the visible range at 575&#xa0;nm. Regarding achieving the advantage of the heterojunction, both the illumination wavelengths at 575&#xa0;nm and 925&#xa0;nm were exposed and their photoelectrical properties studied. This report suggests that the suitability of ZnPc layer as an active photoabsorber in the visible range and ZnPc/<i>n</i>-Ge heterojunction provides a vital advantage for broad spectral absorption due to both organic and inorganic substances.</p> Graphical Abstract <p></p>

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Surface, Interface Characterization, and Current Transport Analysis of ZnPc/n-Ge Organic–Inorganic Heterojunction Photodiode

  • 期刊论文

  • 发表日期：

    2025年11月10日

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  • S. Guruswathi,
  • S. Ramesh,
  • A. Ashok Kumar,
  • V. Janardhanam

摘要

In this article, an attempt is made to fabricate ZnPc-based organic–inorganic heterojunction photodiode using n-Ge as an inorganic substance. An optical study of ZnPc thin films is examined using UV–visible measurements to note the respective B band (Soret band) and Q band. Structural evaluation of ZnPc thin films is presented using Raman measurements and the suitable existence of vibrational bands found at low, medium, and large wavenumber ranges signifies the footprint of ZnPc molecules. Morphological studies of ZnPc thin films on n-Ge substrate is also revealed using field-emission scanning electron microscopy (FESEM) and cross-sectional FESEM. These studies indicate the grains distributed uniformly over the surface without any surface discontinuity. Assuming thermionic emission theory, current–voltage properties were analyzed for Au/n-Ge metal–semiconductor contact and ZnPc/n-Ge heterojunction with various barrier parameters. Good consistency is observed in the evaluation of barrier parameters among different approaches. Finally, the suitability of ZnPc layer as photoabsorber is studied by applying illumination wavelengths in the visible range at 575 nm. Regarding achieving the advantage of the heterojunction, both the illumination wavelengths at 575 nm and 925 nm were exposed and their photoelectrical properties studied. This report suggests that the suitability of ZnPc layer as an active photoabsorber in the visible range and ZnPc/n-Ge heterojunction provides a vital advantage for broad spectral absorption due to both organic and inorganic substances.

Graphical Abstract