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<p>This study presents a simulation-based analysis of a lead-free perovskite (CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>) photovoltaic (PV) solar cell, focusing on the replacement of the conventional organic hole transport layer (HTL), Spiro-OMeTAD, with inorganic Sb<sub>2</sub>S<sub>3</sub> (antimony trisulfide). The simulation results (using SCAPS-1D) show that the proposed solar cell structure, fluorine-doped tin oxide (FTO)/SrTiO<sub>3</sub>/CH<sub>3</sub>NH<sub>3</sub>SnI<sub>3</sub>/Sb<sub>2</sub>S<sub>3</sub>/Au), achieves considerably improved energy level alignment and stronger interfacial electric fields, effectively suppressing recombination losses. The influence of absorber layer, electron transport layer, and HTL thickness is analyzed with respect to the solar cell performance. In addition, the effect of absorber layer defect density is examined to simulate the proposed solar cell design under as many practical conditions as possible. We also investigate the dark current density–voltage (<i>J</i>–<i>V</i>) behavior for a thermal range of 290–330&#xa0;K. The simulation results demonstrate notable performance gains corresponding to optimized solar cell design (absorber thickness = 1000&#xa0;nm, ETL thickness = 150&#xa0;nm, and HTL thickness = 200&#xa0;nm)—an increase in open-circuit voltage (<i>V</i><sub>OC</sub>) from 1.11&#xa0;V to 1.19&#xa0;V, short-circuit current density (<i>J</i><sub>SC</sub>) from 28.85&#xa0;mA/cm<sup>2</sup> to 33.62&#xa0;mA/cm<sup>2</sup>, and fill factor from 88.5% to 89.5%—yielding massively enhanced power conversion efficiency of 36.5% compared to 28.5%. The proposed solar cell design exhibits a significantly reduced dark current (~10<sup>−10</sup> mA/cm<sup>2</sup> at 0&#xa0;V) and superior thermal stability, establishing Sb<sub>2</sub>S<sub>3</sub> as a nontoxic, stable, and cost-effective HTL for advancing efficient, environmentally sustainable tin-based perovskite solar cells.</p>

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Sb2S3 as Hole Transport Layer Material Massively Enhances the Performance and Stability of Tin-Based Perovskite Solar Cell

  • 期刊论文

  • 发表日期：

    2025年11月4日

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  • Sweety Chauhan,
  • Anuj K. Sharma,
  • Nitin Singh Singha,
  • Yogendra Kumar Prajapati

摘要

This study presents a simulation-based analysis of a lead-free perovskite (CH3NH3SnI3) photovoltaic (PV) solar cell, focusing on the replacement of the conventional organic hole transport layer (HTL), Spiro-OMeTAD, with inorganic Sb2S3 (antimony trisulfide). The simulation results (using SCAPS-1D) show that the proposed solar cell structure, fluorine-doped tin oxide (FTO)/SrTiO3/CH3NH3SnI3/Sb2S3/Au), achieves considerably improved energy level alignment and stronger interfacial electric fields, effectively suppressing recombination losses. The influence of absorber layer, electron transport layer, and HTL thickness is analyzed with respect to the solar cell performance. In addition, the effect of absorber layer defect density is examined to simulate the proposed solar cell design under as many practical conditions as possible. We also investigate the dark current density–voltage (J–V) behavior for a thermal range of 290–330 K. The simulation results demonstrate notable performance gains corresponding to optimized solar cell design (absorber thickness = 1000 nm, ETL thickness = 150 nm, and HTL thickness = 200 nm)—an increase in open-circuit voltage (VOC) from 1.11 V to 1.19 V, short-circuit current density (JSC) from 28.85 mA/cm2 to 33.62 mA/cm2, and fill factor from 88.5% to 89.5%—yielding massively enhanced power conversion efficiency of 36.5% compared to 28.5%. The proposed solar cell design exhibits a significantly reduced dark current (~10−10 mA/cm2 at 0 V) and superior thermal stability, establishing Sb2S3 as a nontoxic, stable, and cost-effective HTL for advancing efficient, environmentally sustainable tin-based perovskite solar cells.