<p>The present work demonstrates the application of a Si/Perovskite heterojunction as a photodetector by varying the substrate as <i>n</i>-Si and <i>p</i>-Si for visible electromagnetic radiation. The deposition of a methylammonium lead bromide (MAPbBr₃) perovskite thin film was performed using the one-step spin coating method. The optimized heterojunction of <i>p</i>-Si/Perovskite thin film and <i>n</i>-Si/Perovskite thin film exhibited significant spectral responsivity and detectivity in no bias condition i.e., self-biased mode. The performance of the devices has been measured under different light intensities as well. The heterojunction parameters show promising applications in optoelectronic devices such as imaging, optical sensing, or communication devices.</p> Graphical Abstract <p></p>