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<p>Perovskite semiconductors have garnered attention for their low-cost, high-performance photodetection, while also raising concerns about their ambient durability and material safety. The field had lacked integrated evaluations that treated optoelectronic performance and environmental risk with equal weight. This work aimed to benchmark, in a single device architecture, the performance, stability, and leaching behavior of four representative perovskites—MAPbI<sub>3</sub>, FAPbBr<sub>3</sub>, CsSnBr<sub>3</sub>, and Cs<sub>2</sub>AgBiBr<sub>6</sub>. Devices were fabricated in a planar ITO/PEDOT:PSS/perovskite/PCBM/Ag stack and were characterized by UV–visible spectroscopy, spectral responsivity, time-resolved photoluminescence, transient photocurrent, and impedance spectroscopy; ambient aging at 25°C and 60% relative humidity (RH) with and without encapsulation and inductively coupled plasma mass spectrometry (ICP-MS) leachate analysis were performed. MAPbI<sub>3</sub> delivered the highest responsivity (≈ 0.35–0.39&#xa0;A/W near 500–520&#xa0;nm) but degraded quickly and released the most Pb in soak tests. CsSnBr<sub>3</sub> exhibited the fastest microsecond-scale transients but suffered from rapid Sn oxidation, which shortened its lifetime. Cs<sub>2</sub>AgBiBr<sub>6</sub> maintained its near-initial response for over 1000&#xa0;h under ambient exposure and produced the lowest leachate levels (Bi below detection and Ag at trace concentrations), but yielded a lower peak responsivity (≈ 0.10&#xa0;A/W), consistent with its indirect bandgap; FAPbBr<sub>3</sub> showed intermediate behavior across metrics. Encapsulation increased operational lifetimes by multiples depending on the barrier, with hybrid organic–inorganic coatings providing the largest gains. These comparisons indicated that applications requiring high sensitivity and speed favored iodide-rich absorbers, whereas long maintenance intervals and safety constraints favored double perovskites, despite their reduced gain. Continued efforts are needed to stabilize Sn-based lead-free systems and to engineer interfaces or alloying strategies that increase responsivity while retaining long life and minimal leaching.</p>

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Optoelectronic Characterization of Perovskite Thin Films: Toward Safer and Stable Photodetection Devices

  • 期刊论文

  • 发表日期：

    2025年11月6日

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  • Prasanna Moorthy Venugopal,
  • Kamali Samudram Manickam,
  • Ratchagaraja Dhairiyasamy,
  • V. Malathy

摘要

Perovskite semiconductors have garnered attention for their low-cost, high-performance photodetection, while also raising concerns about their ambient durability and material safety. The field had lacked integrated evaluations that treated optoelectronic performance and environmental risk with equal weight. This work aimed to benchmark, in a single device architecture, the performance, stability, and leaching behavior of four representative perovskites—MAPbI3, FAPbBr3, CsSnBr3, and Cs2AgBiBr6. Devices were fabricated in a planar ITO/PEDOT:PSS/perovskite/PCBM/Ag stack and were characterized by UV–visible spectroscopy, spectral responsivity, time-resolved photoluminescence, transient photocurrent, and impedance spectroscopy; ambient aging at 25°C and 60% relative humidity (RH) with and without encapsulation and inductively coupled plasma mass spectrometry (ICP-MS) leachate analysis were performed. MAPbI3 delivered the highest responsivity (≈ 0.35–0.39 A/W near 500–520 nm) but degraded quickly and released the most Pb in soak tests. CsSnBr3 exhibited the fastest microsecond-scale transients but suffered from rapid Sn oxidation, which shortened its lifetime. Cs2AgBiBr6 maintained its near-initial response for over 1000 h under ambient exposure and produced the lowest leachate levels (Bi below detection and Ag at trace concentrations), but yielded a lower peak responsivity (≈ 0.10 A/W), consistent with its indirect bandgap; FAPbBr3 showed intermediate behavior across metrics. Encapsulation increased operational lifetimes by multiples depending on the barrier, with hybrid organic–inorganic coatings providing the largest gains. These comparisons indicated that applications requiring high sensitivity and speed favored iodide-rich absorbers, whereas long maintenance intervals and safety constraints favored double perovskites, despite their reduced gain. Continued efforts are needed to stabilize Sn-based lead-free systems and to engineer interfaces or alloying strategies that increase responsivity while retaining long life and minimal leaching.