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<p>Graphene-based heterostructure Metal–Oxide–Semiconductor Field-Effect transistors (MOSFETs) represent a transformative advancement over traditional semiconductor technologies owing to their exceptional carrier mobility, tunable bandgap, and atomic-scale thickness of graphene. In this study, we propose a novel tri-layer device architecture combining Graphene, Barium Titanate (BaTiO<sub>3</sub>), and Molybdenum Disulfide (MoS<sub>2</sub>), integrated with a high-k Hafnium dioxide (HfO<sub>2</sub>) gate dielectric. This configuration leverages the high conductivity of graphene, the ferroelectric modulation capability of BaTiO<sub>3</sub>, and the semiconducting nature of MoS<sub>2</sub> to enhance gate control and short-channel behavior. Technology Computer-Aided Design (TCAD) simulations reveal that the MoS<sub>2</sub>/BaTiO<sub>3</sub>/graphene device achieves an <i>I</i><sub>on</sub>/<i>I</i><sub>off</sub> ratio of 1.2 × 10<sup>6</sup> and a subthreshold swing of 68&#xa0;mV/dec, representing a greater than threefold increase in current density and 25% reduction in subthreshold swing versus comparable bilayer FETs. The tri-layer also displays a peak gate capacitance of 370&#xa0;F/g (at 10&#xa0;mV/s) and superior potential stability, outperforming bilayer and single-material structures (Table <InternalRef RefID="Tab2">II</InternalRef>). These advances enable energy-efficient logic, memory, and sensor technologies, and show experimental feasibility for scalable two-dimensional (2D) electronics.</p>

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Enhanced Electronic and Electrical Performance of MoS2/BaTiO3/Graphene Heterostructures: A Systematic Investigation of Material Properties for Advanced Devices

  • 期刊论文

  • 发表日期：

    2025年11月1日

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  • P Harikrishnan,
  • P Sivakumar

摘要

Graphene-based heterostructure Metal–Oxide–Semiconductor Field-Effect transistors (MOSFETs) represent a transformative advancement over traditional semiconductor technologies owing to their exceptional carrier mobility, tunable bandgap, and atomic-scale thickness of graphene. In this study, we propose a novel tri-layer device architecture combining Graphene, Barium Titanate (BaTiO3), and Molybdenum Disulfide (MoS2), integrated with a high-k Hafnium dioxide (HfO2) gate dielectric. This configuration leverages the high conductivity of graphene, the ferroelectric modulation capability of BaTiO3, and the semiconducting nature of MoS2 to enhance gate control and short-channel behavior. Technology Computer-Aided Design (TCAD) simulations reveal that the MoS2/BaTiO3/graphene device achieves an Ion/Ioff ratio of 1.2 × 106 and a subthreshold swing of 68 mV/dec, representing a greater than threefold increase in current density and 25% reduction in subthreshold swing versus comparable bilayer FETs. The tri-layer also displays a peak gate capacitance of 370 F/g (at 10 mV/s) and superior potential stability, outperforming bilayer and single-material structures (Table II). These advances enable energy-efficient logic, memory, and sensor technologies, and show experimental feasibility for scalable two-dimensional (2D) electronics.