<p>The continuous increase in nitrogen oxide (NO_<i>x</i>) emissions from combustion processes, primarily from industrial factories and gasoline-powered vehicles, poses a significant threat to all living organisms. The detrimental effects of NO_<i>x</i> on human health and the environment necessitate concentrated efforts to reduce these emissions. Various strategies have been developed to mitigate NO_<i>x</i> emissions from exhaust fumes. Recently, photocatalytic oxidation technologies for removing NO_<i>x</i> have gained considerable attention within the scientific community. Photocatalytic NO_<i>x</i> removal (PNR) is a promising environmentally friendly and cost-effective method for reducing NO_<i>x</i> concentrations at room temperature. This review categorizes and summarizes the multifaceted aspects of PNR. It provides a concise overview of the photocatalytic mechanism and the NO_<i>x</i> abatement process. Investigations reveal that the efficiency of NO_<i>x</i> removal significantly depends on the bandgap and positions of the valence and conduction band edges, which can be tuned by incorporating suitable dopants or forming heterojunctions. The charge transfer at the photocatalyst surface can be enhanced by employing various methods to tune the surface morphology. This review offers comprehensive details on the semiconductor materials used for NO_<i>x</i> abatement and discusses how their unique properties contribute to efficient PNR.</p> Graphical Abstract <p></p>