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<p>This study proposes a novel method for optimizing and regulating aluminum (Al)-silicon (Si) contacts. Localized boron-doping regions, incorporating both boron (B) atoms and Si atoms, were formed by laser irradiation of printed Si paste in a dashed-line pattern. These regions, positioned between stack openings and the Al electrode grid, served to suppress metal-induced recombination. The residual melted Si paste reduced Si consumption from the wafer at the contact interface and enabled faster Si saturation in liquid Al, thereby significantly reducing contact depth and yielding thicker recrystallized Al-B codoped regions beneath the contacts. Implementation of this localized laser doping process on the rear side of passivated emitter and rear locally doped (PERL) cells resulted in an average efficiency improvement of 0.09%. Enhancements in fill factor (FF) and short-circuit current (<i>I</i><sub>sc</sub>) were attributed to high contact quality, as indicated by low contact resistivity in the localized boron-doping region.</p>

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The Influence of Localized Laser Boron-Doping Regions Using Si Paste as a Source on the Performance of Al–Si Contact Electrodes

  • 期刊论文

  • 发表日期：

    2025年10月4日

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  • Feng Qian,
  • Honglie Shen,
  • Juan Hong

摘要

This study proposes a novel method for optimizing and regulating aluminum (Al)-silicon (Si) contacts. Localized boron-doping regions, incorporating both boron (B) atoms and Si atoms, were formed by laser irradiation of printed Si paste in a dashed-line pattern. These regions, positioned between stack openings and the Al electrode grid, served to suppress metal-induced recombination. The residual melted Si paste reduced Si consumption from the wafer at the contact interface and enabled faster Si saturation in liquid Al, thereby significantly reducing contact depth and yielding thicker recrystallized Al-B codoped regions beneath the contacts. Implementation of this localized laser doping process on the rear side of passivated emitter and rear locally doped (PERL) cells resulted in an average efficiency improvement of 0.09%. Enhancements in fill factor (FF) and short-circuit current (Isc) were attributed to high contact quality, as indicated by low contact resistivity in the localized boron-doping region.