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<p>The reliability of the die attach structure in silicon carbide (SiC)-based insulated-gate bipolar transistors (IGBTs) is critical for high-performance power electronics applications, as thermal cycling and mechanical stresses can induce premature failure. In this work, an analytical model was developed to evaluate stress and strain distributions within IGBT modules under cyclic thermal loading conditions. Leveraging established geometric dimensions and material properties of the die, solder, and substrate, the model directly computes the assembly stiffness (<i>K</i>) and the imposed strain (<i>D</i>), thereby eliminating the need for iterative finite element (FE) simulations and significantly reducing computational time. The accuracy of the proposed model was validated through FE simulation. Subsequently, die attach structures were fabricated using lead-rich solder and sintered copper with varying thickness configurations. Experimental validation was conducted to corroborate the model’s predictive rationality. Meanwhile, the model proposed in this manuscript was compared with other analytical models and evaluated against alternative lifetime prediction approaches. These results provide critical insights into optimizing die attach design and material selection to enhance the reliability and lifespan of power electronics modules under harsh operating conditions.</p>

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Analytical Modeling and Validation of Thermal Fatigue Failure in Die Attach Structures for Power Electronics Modules

  • 期刊论文

  • 发表日期：

    2025年9月30日

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  • Xinghe Luan,
  • Liguo Ding,
  • Danlei Jiang,
  • Xuemin Li,
  • Hongjie Zhang,
  • Kewei Li,
  • Shaohui Wu,
  • Longzao Zhou,
  • Fengshun Wu

摘要

The reliability of the die attach structure in silicon carbide (SiC)-based insulated-gate bipolar transistors (IGBTs) is critical for high-performance power electronics applications, as thermal cycling and mechanical stresses can induce premature failure. In this work, an analytical model was developed to evaluate stress and strain distributions within IGBT modules under cyclic thermal loading conditions. Leveraging established geometric dimensions and material properties of the die, solder, and substrate, the model directly computes the assembly stiffness (K) and the imposed strain (D), thereby eliminating the need for iterative finite element (FE) simulations and significantly reducing computational time. The accuracy of the proposed model was validated through FE simulation. Subsequently, die attach structures were fabricated using lead-rich solder and sintered copper with varying thickness configurations. Experimental validation was conducted to corroborate the model’s predictive rationality. Meanwhile, the model proposed in this manuscript was compared with other analytical models and evaluated against alternative lifetime prediction approaches. These results provide critical insights into optimizing die attach design and material selection to enhance the reliability and lifespan of power electronics modules under harsh operating conditions.