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<p>In this paper, a superjunction gate (SJG) metal–oxide–semiconductor field-effect transistor (MOSFET) with bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated using the Sentaurus program. It features a P-pillar extended gate with P-type doping, forming a quasi-superjunction structure with an N-type drift region. In the on-state, a positive voltage is applied to the gate, causing the gate potential to extend along the P-pillar. This forms an electron accumulation layer on the right side of the N-pillar, resulting in a significantly reduced specific on-resistance (<i>R</i><sub>on,sp</sub>) and substantially enhanced transconductance (<i>g</i><sub><i>m</i></sub>). In the off-state, the auxiliary depletion between the N-pillar and P-pillar modulates the electric field in the drift region of the device, ensuring a high breakdown voltage (<i>BV</i>). The simulation results show that at a doping concentration of 4.0 × 10<sup>15</sup>&#xa0;cm<sup>−3</sup>, the <i>BV</i> and <i>R</i><sub><i>on,sp</i></sub> are 325&#xa0;V and 3.16&#xa0;mΩ·cm<sup>2</sup>, respectively. The <i>FOM</i> optimal value can reach 31.8&#xa0;MW/cm<sup>2</sup>. Compared with the conventional MOSFET (CON-MOSFET), SJ-MOSFET, and gate accumulation (GA)-MOSFET, the <i>FOM</i> value of the SJG-MOSFET increased by 10 times, two times, and 20.5%, respectively, which breaks through the silicon limit of the reduced surface field (RESURF).</p>

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A Superjunction Gate SJG-MOSFET for Dramatically Improved Baliga Figure of Merit

  • 期刊论文

  • 发表日期：

    2025年10月2日

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  • Yixin Yan,
  • Weizhong Chen,
  • Jialing Qin,
  • Wenshu Luo,
  • Jing Xiao,
  • Haishi Wang

摘要

In this paper, a superjunction gate (SJG) metal–oxide–semiconductor field-effect transistor (MOSFET) with bulk electron accumulation in the drift is proposed, and the physical mechanism is investigated using the Sentaurus program. It features a P-pillar extended gate with P-type doping, forming a quasi-superjunction structure with an N-type drift region. In the on-state, a positive voltage is applied to the gate, causing the gate potential to extend along the P-pillar. This forms an electron accumulation layer on the right side of the N-pillar, resulting in a significantly reduced specific on-resistance (Ron,sp) and substantially enhanced transconductance (gm). In the off-state, the auxiliary depletion between the N-pillar and P-pillar modulates the electric field in the drift region of the device, ensuring a high breakdown voltage (BV). The simulation results show that at a doping concentration of 4.0 × 1015 cm−3, the BV and Ron,sp are 325 V and 3.16 mΩ·cm2, respectively. The FOM optimal value can reach 31.8 MW/cm2. Compared with the conventional MOSFET (CON-MOSFET), SJ-MOSFET, and gate accumulation (GA)-MOSFET, the FOM value of the SJG-MOSFET increased by 10 times, two times, and 20.5%, respectively, which breaks through the silicon limit of the reduced surface field (RESURF).