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<p>This research presents the fabrication of novel potassium-doped SnO<sub>2</sub> thin films for the first time by an inexpensive spray pyrolysis procedure. The percentages of potassium doping were 3.5, 7, and 10.5 wt%. The impact of potassium doping on the structural, morphological, optical, and electrical properties of SnO<sub>2</sub> was systematically investigated. X-ray diffraction results revealed a single tetragonal phase for all K-doped SnO<sub>2</sub> films. The growth in the potassium ratio decreases the lattice parameters and crystallite sizes of the K-doped SnO<sub>2</sub> films. Furthermore, the optical measurements revealed a direct optical transition for all films with a wide band gap reduced from 3.69 to 3.25&#xa0;eV by expanding the potassium ratio. Furthermore, the boost in potassium doping enhances the plasma frequency from 5.27&#xa0;×&#xa0;10<sup>14</sup> to 7.95&#xa0;×&#xa0;10<sup>14</sup>&#xa0;Hz, and increases the refractive index from 3.2 to 4.4. The electrical analysis of the K-doped SnO<sub>2</sub> films showed a reduction in sheet resistance. The figure-of-merit (ϕ) of the K-doped SnO<sub>2</sub> films increased from 2.28 to 4.18% Ω<sup>-1</sup>, indicating the potential of K-doped SnO<sub>2</sub> films as promising candidates for transparent conductive oxide applications in optoelectronic and photovoltaic devices.</p>

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Exploring the Impact of K-Doping on the Structural, Morphological, Electrical, and Optical Properties of SnO2 Thin Films Grown by Nebulizer Spray Pyrolysis

  • 期刊论文

  • 发表日期：

    2025年9月11日

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  • Abdullah Alsulami

摘要

This research presents the fabrication of novel potassium-doped SnO2 thin films for the first time by an inexpensive spray pyrolysis procedure. The percentages of potassium doping were 3.5, 7, and 10.5 wt%. The impact of potassium doping on the structural, morphological, optical, and electrical properties of SnO2 was systematically investigated. X-ray diffraction results revealed a single tetragonal phase for all K-doped SnO2 films. The growth in the potassium ratio decreases the lattice parameters and crystallite sizes of the K-doped SnO2 films. Furthermore, the optical measurements revealed a direct optical transition for all films with a wide band gap reduced from 3.69 to 3.25 eV by expanding the potassium ratio. Furthermore, the boost in potassium doping enhances the plasma frequency from 5.27 × 1014 to 7.95 × 1014 Hz, and increases the refractive index from 3.2 to 4.4. The electrical analysis of the K-doped SnO2 films showed a reduction in sheet resistance. The figure-of-merit (ϕ) of the K-doped SnO2 films increased from 2.28 to 4.18% Ω-1, indicating the potential of K-doped SnO2 films as promising candidates for transparent conductive oxide applications in optoelectronic and photovoltaic devices.