The present work focuses on the effect of partial substitution of ZnO (former) by various other oxides on the microstructure, electrical, and other properties. It reveals the fact that the hetero-covalent bond dissociation energy for V-O, Cd-O, Te-O, and Cu-O is reduced as a whole if we move from the host system, [0.2Fe-0.8(0.5-0.4 CdO-0.1 ZnO)] (A) to the ZnO substituted (partial) systems (B, C and D), which may have a direct impact on the optical band gap energy (Eopt). Powder x-ray diffraction (PXRD) and scanning electron microscopic (SEM) images reveal that the platelet-type structure of Zn3V2O8 exists in system A, which may affect the pathways available for electron conduction. Te2O5-distributed ladder-type nanostructures are present in system B. In system C, Cu2O7V2 nanostructures with a distinctive wrinkled morphology are observed. Mixed phases comprising Cu1.9O29V12 and Cd2O7Te2 in system D may allow it to absorb high-energy light in the ultraviolet-visible spectra (UV–vis spectra). Higher Debye temperature of all as-developed systems may indicate the higher stability limit. The range of estimated optical band gap energy values may reveal that they are of indirect allowed band gap semiconductors, which exhibit a no-adiabatic condition for polaron hopping. System C exhibits the lowest relaxation times, 0.08630 × 1013 S; the highest density of states near Fermi level (0.787 × 1019 eV−1 cm−3 and 3.49 × 1028 eV−1 cm−3 using Mott’s variable range hopping (VRH) model in the low-temperature window and Greave’s model in the high-temperature window, respectively), which may be considered to be the main reason for exhibiting highest direct current conductivity (DC conductivity) via hopping of polarons across adjacent lattice sites. The present materials may be significantly helpful in specialized applications such as high-power lasers for their high refractive indices. The Fourier transform infrared (FTIR) absorption spectra of the present glassy system may highlight significant information about the structural alteration with respect to the partial substitution of formers for A, B, C and D, respectively. An insightful study of composition-dependent microstructure and electrical transport phenomena with different former-modifier ratios is of great interest not only from an application point of view but also from an academic interest.

Deep Insight into the Former-Modifier Effect on the Electrical, Optical, and Structural Properties of Iron-Vanadium Doped Systems

期刊论文
发表日期：

2025年9月22日

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Jiban Ghosh,
Mir Sahidul Ali,
Ritu Sarkar,
R. K. Shukla,
Joydeep Chowdhury,
Prithwiraj Bhowmick,
Sanjib Bhattacharya

摘要

The present work focuses on the effect of partial substitution of ZnO (former) by various other oxides on the microstructure, electrical, and other properties. It reveals the fact that the hetero-covalent bond dissociation energy for V-O, Cd-O, Te-O, and Cu-O is reduced as a whole if we move from the host system, [0.2Fe-0.8(0.5-0.4 CdO-0.1 ZnO)] (A) to the ZnO substituted (partial) systems (B, C and D), which may have a direct impact on the optical band gap energy (E_opt). Powder x-ray diffraction (PXRD) and scanning electron microscopic (SEM) images reveal that the platelet-type structure of Zn₃V₂O₈ exists in system A, which may affect the pathways available for electron conduction. Te₂O₅-distributed ladder-type nanostructures are present in system B. In system C, Cu₂O₇V₂ nanostructures with a distinctive wrinkled morphology are observed. Mixed phases comprising Cu_1.9O₂₉V₁₂ and Cd₂O₇Te₂ in system D may allow it to absorb high-energy light in the ultraviolet-visible spectra (UV–vis spectra). Higher Debye temperature of all as-developed systems may indicate the higher stability limit. The range of estimated optical band gap energy values may reveal that they are of indirect allowed band gap semiconductors, which exhibit a no-adiabatic condition for polaron hopping. System C exhibits the lowest relaxation times, 0.08630 × 10¹³ S; the highest density of states near Fermi level (0.787 × 10¹⁹ eV⁻¹ cm⁻³ and 3.49 × 10²⁸ eV⁻¹ cm⁻³ using Mott’s variable range hopping (VRH) model in the low-temperature window and Greave’s model in the high-temperature window, respectively), which may be considered to be the main reason for exhibiting highest direct current conductivity (DC conductivity) via hopping of polarons across adjacent lattice sites. The present materials may be significantly helpful in specialized applications such as high-power lasers for their high refractive indices. The Fourier transform infrared (FTIR) absorption spectra of the present glassy system may highlight significant information about the structural alteration with respect to the partial substitution of formers for A, B, C and D, respectively. An insightful study of composition-dependent microstructure and electrical transport phenomena with different former-modifier ratios is of great interest not only from an application point of view but also from an academic interest.