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<p>Sintered copper has attracted extensive attention in the field of SiC power device packaging in recent years because of its lower cost, higher strength, better matching coefficient of thermal expansion with chip and substrate, and better anti-electromigration performance compared with sintered silver. The effects of sintering pressure, temperature, and time on the microstructure, thermal conductivity, shear strength, and shear fracture behavior of the micron-copper joint were studied. The optimum sintering process scheme was obtained by orthogonal testing. As the sintering pressure and temperature increased, the porosity of the sintered layer decreased and the interfacial connection rate increased. Consequently, the thermal conductivity, plasticity, and shear strength of the sintered layer improved. However, as the sintering time was extended, the optimization of the porosity and interfacial connection rate of the sintered layer was not significant, so that the thermal conductivity, plasticity, and shear strength of the sintered layer were not significantly improved. As the sintering pressure and temperature increased, the shear fracture type of the joint changed from a chip interface fracture to the mixed fracture of both interfaces and the interior, while the fracture type remained as a chip interface fracture as the sintering time was extended. Orthogonal experiment optimization identified 280&#xa0;°C, 8&#xa0;min, and 20&#xa0;MPa as the optimal sintering parameters, producing a sintered layer with 10.2% porosity, 286.96&#xa0;W/(m&#xa0;K) thermal conductivity, and 48.21&#xa0;MPa shear strength. This study shows that micron-copper particles can be sintered at low temperatures to perform as well as nano-copper particles, providing a cheaper option for packaging SiC devices.</p>

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Investigation on the Die-Attach Interconnection Process of Micron-Copper Sintering for SiC Power Device Packaging

  • 期刊论文

  • 发表日期：

    2025年9月9日

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  • Danlei Jiang,
  • Longzao Zhou,
  • Fengshun Wu,
  • Liguo Ding,
  • Kewei Li,
  • Xuemin Li,
  • Xueling Zhang

摘要

Sintered copper has attracted extensive attention in the field of SiC power device packaging in recent years because of its lower cost, higher strength, better matching coefficient of thermal expansion with chip and substrate, and better anti-electromigration performance compared with sintered silver. The effects of sintering pressure, temperature, and time on the microstructure, thermal conductivity, shear strength, and shear fracture behavior of the micron-copper joint were studied. The optimum sintering process scheme was obtained by orthogonal testing. As the sintering pressure and temperature increased, the porosity of the sintered layer decreased and the interfacial connection rate increased. Consequently, the thermal conductivity, plasticity, and shear strength of the sintered layer improved. However, as the sintering time was extended, the optimization of the porosity and interfacial connection rate of the sintered layer was not significant, so that the thermal conductivity, plasticity, and shear strength of the sintered layer were not significantly improved. As the sintering pressure and temperature increased, the shear fracture type of the joint changed from a chip interface fracture to the mixed fracture of both interfaces and the interior, while the fracture type remained as a chip interface fracture as the sintering time was extended. Orthogonal experiment optimization identified 280 °C, 8 min, and 20 MPa as the optimal sintering parameters, producing a sintered layer with 10.2% porosity, 286.96 W/(m K) thermal conductivity, and 48.21 MPa shear strength. This study shows that micron-copper particles can be sintered at low temperatures to perform as well as nano-copper particles, providing a cheaper option for packaging SiC devices.