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<p>The photogalvanic effect (PGE) has attracted much attention in noncentrosymmetric materials for its ability to generate photocurrents at zero external bias voltage, and it exhibits excellent polarization sensitivity over a wide spectral range. In this study, we designed and constructed armchair and zigzag two-probe photodetectors based on a benzene-like BeN<sub>3</sub> monolayer with planar N<sub>6</sub> rings, and investigated the linear and elliptical PGEs in two types of devices. By means of introducing point defects, namely vacancy and substitutional doping, it was demonstrated that the vacancy and substitutional doping reduced the symmetry of the BeN<sub>3</sub> monolayer, and then yielded large photocurrent responses and showed robust PGEs. Notably, the zigzag BeN<sub>3</sub> photodetector for the vacancy-Be case exhibited excellent sensitivity in polarization detection, which highlights the potential of BeN<sub>3</sub> monolayer for polarization-sensitive photodetectors. In conclusion, this study offers significant theoretical insights into the modulation of PGE and its generated photocurrents through different point defects, and indicates the strong suitability of the BeN<sub>3</sub> monolayer for applications in advanced optoelectronic and nanoelectronic devices.</p>

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Enhanced Photocurrents Produced in the BeN3 Photodetector by Point Defects

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • Haixia Gao,
  • Guangyao Liang,
  • Xi Fu,
  • Hui Zeng,
  • Liming Li

摘要

The photogalvanic effect (PGE) has attracted much attention in noncentrosymmetric materials for its ability to generate photocurrents at zero external bias voltage, and it exhibits excellent polarization sensitivity over a wide spectral range. In this study, we designed and constructed armchair and zigzag two-probe photodetectors based on a benzene-like BeN3 monolayer with planar N6 rings, and investigated the linear and elliptical PGEs in two types of devices. By means of introducing point defects, namely vacancy and substitutional doping, it was demonstrated that the vacancy and substitutional doping reduced the symmetry of the BeN3 monolayer, and then yielded large photocurrent responses and showed robust PGEs. Notably, the zigzag BeN3 photodetector for the vacancy-Be case exhibited excellent sensitivity in polarization detection, which highlights the potential of BeN3 monolayer for polarization-sensitive photodetectors. In conclusion, this study offers significant theoretical insights into the modulation of PGE and its generated photocurrents through different point defects, and indicates the strong suitability of the BeN3 monolayer for applications in advanced optoelectronic and nanoelectronic devices.