Scholarlink

<p>The investigation of single-event transient (SET) effects in a double-π-gate AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor (MOSHEMT) is explored herein. The single-event effect (SEE) is a serious problem in Al<sub>0.27</sub>Ga<sub>0.73</sub>N/GaN MOSHEMTs under high linear energy transfer (LET) radiation (e.g., 47.36&#xa0;MeV&#xa0;cm<sup>2</sup>/mg). In all circumstances tested, the recombination of electron–hole pairs neutralizes carriers created by SET, restoring the carrier concentration of the two-dimensional electron gas (2DEG) and drain current to normal values during the ON state. High-LET results reveal that increasing the LET has no significant impact on drain current collapse. The results suggest that heavy ion beams generate very few electron–hole pairs in the double-π-gate AlGaN/GaN MOSHEMT during both OFF and ON states. When the device is irradiated with a heavy ion beam, the large conduction band energy offsets remain unaffected. The proposed design effectively eliminates hot electron injection effects. The double-π-gate structure ensures a uniform peak electric field distribution. The results also reveal lower levels of SETs due to the presence of three parallel gate pillars.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Influence of Transient Radiation on Tapping Effects in a Gate-Engineered AlGaN/GaN MOSHEMT

  • 期刊论文

  • 发表日期：

    2025年8月28日

查看全文
  • Rayabarapu Venkateswarlu,
  • Bibhudendra Acharya,
  • Ashish Kumar,
  • Guru Prasad Mishra

摘要

The investigation of single-event transient (SET) effects in a double-π-gate AlGaN/GaN metal–oxide–semiconductor high-electron-mobility transistor (MOSHEMT) is explored herein. The single-event effect (SEE) is a serious problem in Al0.27Ga0.73N/GaN MOSHEMTs under high linear energy transfer (LET) radiation (e.g., 47.36 MeV cm2/mg). In all circumstances tested, the recombination of electron–hole pairs neutralizes carriers created by SET, restoring the carrier concentration of the two-dimensional electron gas (2DEG) and drain current to normal values during the ON state. High-LET results reveal that increasing the LET has no significant impact on drain current collapse. The results suggest that heavy ion beams generate very few electron–hole pairs in the double-π-gate AlGaN/GaN MOSHEMT during both OFF and ON states. When the device is irradiated with a heavy ion beam, the large conduction band energy offsets remain unaffected. The proposed design effectively eliminates hot electron injection effects. The double-π-gate structure ensures a uniform peak electric field distribution. The results also reveal lower levels of SETs due to the presence of three parallel gate pillars.