Scholarlink

<p>Copper indium gallium selenide (CIGS) is a semiconductor material with promising prospects in photovoltaics, energy storage, and photodetection. This report assesses the effects of sputtering deposition time (ranging from 30&#xa0;min to 120&#xa0;min) on the surface structural, optical, and light-responsive properties of CIGS-based photodetectors. Various analytical techniques, including scanning electron microscopy (SEM), x-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, and solar simulator measurements were used to elucidate the relationship between deposition time and device performance. XRD and SEM analyses confirmed that the CIGS films exhibited an amorphous structure, with layer thickness ranging from 45.61&#xa0;nm to 171.59&#xa0;nm. As deposition times increased, the formation of larger absorber layers caused changes in the energy bandgap, shifting from 4.3&#xa0;eV to 3.4&#xa0;eV. The ideal deposition time of 120&#xa0;min yielded a film thickness of 171.59&#xa0;nm, energy bandgap of 3.4&#xa0;eV, and light response time of 0.98&#xa0;s, revealing rapid light responsiveness. These findings emphasize the importance of deposition time in tuning the properties of CIGS-based photodetectors and provide useful insights for optimizing their performance in optoelectronic applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Optimizing CIGS-Based Photodetectors: Influence of Deposition Time on Structural, Optical, and Light Response Characteristics

  • 期刊论文

  • 发表日期：

    2025年9月9日

查看全文
  • Maghfirah Yusriyadibah Fuad,
  • Ali Aqeel Salim,
  • Nurul Lathi’i Fatul Chamidah,
  • Atika Sari Puspita Dewi,
  • Erma Surya Yuliana,
  • Nasikhudin,
  • Henry Setianto,
  • Nandang Mufti

摘要

Copper indium gallium selenide (CIGS) is a semiconductor material with promising prospects in photovoltaics, energy storage, and photodetection. This report assesses the effects of sputtering deposition time (ranging from 30 min to 120 min) on the surface structural, optical, and light-responsive properties of CIGS-based photodetectors. Various analytical techniques, including scanning electron microscopy (SEM), x-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, and solar simulator measurements were used to elucidate the relationship between deposition time and device performance. XRD and SEM analyses confirmed that the CIGS films exhibited an amorphous structure, with layer thickness ranging from 45.61 nm to 171.59 nm. As deposition times increased, the formation of larger absorber layers caused changes in the energy bandgap, shifting from 4.3 eV to 3.4 eV. The ideal deposition time of 120 min yielded a film thickness of 171.59 nm, energy bandgap of 3.4 eV, and light response time of 0.98 s, revealing rapid light responsiveness. These findings emphasize the importance of deposition time in tuning the properties of CIGS-based photodetectors and provide useful insights for optimizing their performance in optoelectronic applications.