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<p>In this paper we analyze the DC performance of two novel next-generation vertical high-electron-mobility transistors (HEMTs) with an AlGaN/GaN heterojunction material system, using TCAD (technology computer-aided design) simulations. We investigate a current aperture vertical electron transistor (CAVET) HEMT, which is normally on, and a superjunction HEMT, which is normally off. The CAVET shows a threshold voltage near −6.3 V, low specific on-resistance of about 2.95 Ω·mm, and peak transconductance of 1.03 S/mm. In contrast, the superjunction device has a threshold voltage of 1.2 V and extremely low off-state leakage in the attoampere-per-millimeter range, but higher on-resistance of 71.5 Ω·mm and lower peak transconductance of 45.1 mS/mm. The normally off superjunction design offers a built-in safety feature and keeps static losses very low. Meanwhile, the CAVET’s strong transconductance suggests that it can switch more quickly. Both structures are far better than their lateral counterparts and are truly disruptive technologies. Because of the emerging AlGaN/GaN material system, these devices are best suited for modern electronics applications, especially for high-speed switching.</p>

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DC Characterization of Next-Generation Vertical AlGaN/GaN HEMTs having CAVET and Superjunction Architectures for High-Performance Electronics

  • 期刊论文

  • 发表日期：

    2025年9月1日

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  • Swastik Kumar Sahu,
  • Kaushik Mazumdar

摘要

In this paper we analyze the DC performance of two novel next-generation vertical high-electron-mobility transistors (HEMTs) with an AlGaN/GaN heterojunction material system, using TCAD (technology computer-aided design) simulations. We investigate a current aperture vertical electron transistor (CAVET) HEMT, which is normally on, and a superjunction HEMT, which is normally off. The CAVET shows a threshold voltage near −6.3 V, low specific on-resistance of about 2.95 Ω·mm, and peak transconductance of 1.03 S/mm. In contrast, the superjunction device has a threshold voltage of 1.2 V and extremely low off-state leakage in the attoampere-per-millimeter range, but higher on-resistance of 71.5 Ω·mm and lower peak transconductance of 45.1 mS/mm. The normally off superjunction design offers a built-in safety feature and keeps static losses very low. Meanwhile, the CAVET’s strong transconductance suggests that it can switch more quickly. Both structures are far better than their lateral counterparts and are truly disruptive technologies. Because of the emerging AlGaN/GaN material system, these devices are best suited for modern electronics applications, especially for high-speed switching.