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<p>Surge arresters protect power grid equipment by absorbing overvoltage, and SnO<sub>2</sub> varistors are their key components. As the voltage levels of power systems continue to increase, higher reliability requirements are being placed on SnO<sub>2</sub> varistors. This study employs a combined approach of the Voronoi model and experimentation to investigate the relationship between the microstructure and macro-electrical properties of Y<sub>2</sub>O<sub>3</sub>-doped tin dioxide varistors. Specifically, the Voronoi model confirms that reducing grain size and optimizing grain boundary resistance can synergistically improve voltage gradient and nonlinear characteristics. Experiments revealed that 0.04&#xa0;mol% Y<sub>2</sub>O<sub>3</sub> is the optimal doping concentration, which reduces porosity, enhances density, and improves electrical performance. Finally, mechanism analysis revealed that Y<sub>2</sub>O<sub>3</sub> doping enhances the Schottky barrier height by increasing the oxygen vacancy concentration. These findings provide a valuable theoretical and experimental basis for the development of high-performance tin dioxide varistors.</p>

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Correlation Mechanism Between Microstructure and Electrical Properties of Y2O3-Doped SnO2 Varistors Based on the Voronoi Model

  • 期刊论文

  • 发表日期：

    2025年8月23日

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  • Guanyue Sun,
  • Kai Wei,
  • Jinshan Zhang,
  • Xiaolong Wang

摘要

Surge arresters protect power grid equipment by absorbing overvoltage, and SnO2 varistors are their key components. As the voltage levels of power systems continue to increase, higher reliability requirements are being placed on SnO2 varistors. This study employs a combined approach of the Voronoi model and experimentation to investigate the relationship between the microstructure and macro-electrical properties of Y2O3-doped tin dioxide varistors. Specifically, the Voronoi model confirms that reducing grain size and optimizing grain boundary resistance can synergistically improve voltage gradient and nonlinear characteristics. Experiments revealed that 0.04 mol% Y2O3 is the optimal doping concentration, which reduces porosity, enhances density, and improves electrical performance. Finally, mechanism analysis revealed that Y2O3 doping enhances the Schottky barrier height by increasing the oxygen vacancy concentration. These findings provide a valuable theoretical and experimental basis for the development of high-performance tin dioxide varistors.