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<p>We have developed and analyzed an analytical model of a double-gate graphene nanoribbon field-effect transistor (GNRFET), which is subsequently evaluated through numerical simulations, to investigate its potential as an ammonia (NH<sub>3</sub>) gas sensor. Using lanthanum aluminate (LaAlO<sub>3</sub>), known for its high dielectric constant (<i>K</i>&#xa0;=&#xa0;30), serves as a gate dielectric in the configuration of GNRFET gas sensors to minimize short-channel effects and leakage current. The study investigates the static characteristics of the device both in the presence and absence of ammonia gas, providing insights into its potential for gas detection. Following the determination of the device structure, the drain current is calculated as a function of gate and drain bias voltages. The general current equation is enhanced by incorporating expressions that account for the influence of NH<sub>3</sub> gas and temperature variations. These mathematical formulations are then utilized to develop a comprehensive simulation program. The simulation is conducted on GNRFET devices with gate lengths ranging from 100&#xa0;nm to 300&#xa0;nm, and NH<sub>3</sub> gas concentrations from 300&#xa0;ppm to 500&#xa0;ppm. The simulation results provide insight into how various parameters affect the performance of GNRFETs. Our findings demonstrate that GNRFETs exhibit significant potential as high-quality NH<sub>3</sub> gas sensors, highlighting their applicability in environmental monitoring and sensor technology.</p>

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Enhancing Drain Current in Nano-carbon Transistors: Simulation and Modeling with LaAlO3 Dielectric Under NH3 Exposure

  • 期刊论文

  • 发表日期：

    2025年8月19日

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  • Hana Laouar,
  • Saadeddine Khemissi,
  • Linda Aissani,
  • Ahcen Keziz,
  • Taha Abdel Mohaymen Taha

摘要

We have developed and analyzed an analytical model of a double-gate graphene nanoribbon field-effect transistor (GNRFET), which is subsequently evaluated through numerical simulations, to investigate its potential as an ammonia (NH3) gas sensor. Using lanthanum aluminate (LaAlO3), known for its high dielectric constant (K = 30), serves as a gate dielectric in the configuration of GNRFET gas sensors to minimize short-channel effects and leakage current. The study investigates the static characteristics of the device both in the presence and absence of ammonia gas, providing insights into its potential for gas detection. Following the determination of the device structure, the drain current is calculated as a function of gate and drain bias voltages. The general current equation is enhanced by incorporating expressions that account for the influence of NH3 gas and temperature variations. These mathematical formulations are then utilized to develop a comprehensive simulation program. The simulation is conducted on GNRFET devices with gate lengths ranging from 100 nm to 300 nm, and NH3 gas concentrations from 300 ppm to 500 ppm. The simulation results provide insight into how various parameters affect the performance of GNRFETs. Our findings demonstrate that GNRFETs exhibit significant potential as high-quality NH3 gas sensors, highlighting their applicability in environmental monitoring and sensor technology.