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<p>We demonstrate an advanced InGaAsSb extended short-wavelength infrared photodetector with novel complementary quantum barriers (CQB). The photodetector uses an InGaAsSb alloy as the absorber and GaSb/AlAsSb and InAs/AlSb superlattices as the complementary electron and hole barriers, respectively. The In<sub>0.28</sub>Ga<sub>0.72</sub>As<sub>0.25</sub>Sb<sub>0.75</sub> absorber results in a 50% cutoff wavelength of 2.85&#xa0;μm for the detector at room temperature (300&#xa0;K). The photodetector exhibited room-temperature peak responsivity of 0.68 A/W at 2.04&#xa0;μm, corresponding to quantum efficiency of 41.6% at −0.2&#xa0;V bias under front-side illumination, without any anti-reflection coating. The dark current density of the CQB detector is 2.6 × 10<sup>−2</sup> A/cm<sup>2</sup> under −0.2V bias at room temperature. Temperature-dependent current–voltage <i>I</i>–<i>V</i> characterization and <i>I</i>–<i>V</i> simulations show that the dark current is dominated by the generation−recombination mechanism, occurring predominantly at the metallurgical depletion region exposed to the mesa sidewall. These results demonstrate the feasibility of utilizing superlattice materials as barriers in the development of advanced InGaAsSb barrier detectors.</p>

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Demonstration of InGaAsSb Extended Short-wavelength Infrared Photodetectors with Novel Complementary Quantum Barriers

  • 期刊论文

  • 发表日期：

    2025年8月20日

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  • Nong Li,
  • Xiangyu Zhang,
  • Donghai Wu,
  • Dongwei Jiang,
  • Guowei Wang,
  • Hongyue Hao,
  • Yingqiang Xu,
  • Zhichuan Niu

摘要

We demonstrate an advanced InGaAsSb extended short-wavelength infrared photodetector with novel complementary quantum barriers (CQB). The photodetector uses an InGaAsSb alloy as the absorber and GaSb/AlAsSb and InAs/AlSb superlattices as the complementary electron and hole barriers, respectively. The In0.28Ga0.72As0.25Sb0.75 absorber results in a 50% cutoff wavelength of 2.85 μm for the detector at room temperature (300 K). The photodetector exhibited room-temperature peak responsivity of 0.68 A/W at 2.04 μm, corresponding to quantum efficiency of 41.6% at −0.2 V bias under front-side illumination, without any anti-reflection coating. The dark current density of the CQB detector is 2.6 × 10−2 A/cm2 under −0.2V bias at room temperature. Temperature-dependent current–voltage I–V characterization and I–V simulations show that the dark current is dominated by the generation−recombination mechanism, occurring predominantly at the metallurgical depletion region exposed to the mesa sidewall. These results demonstrate the feasibility of utilizing superlattice materials as barriers in the development of advanced InGaAsSb barrier detectors.